Delta p+-doped InGaAs grown by gas source MBE for novel optoelectronic memory

H. Sakata, Y. Nagao, Yuichi Matsushima

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We report a novel optoelectronic memory characteristic in `Symmetric Triangular-barrier Optoelectronic Switch (S-TOPS)', which consists of a symmetric n+-i-δp+-i-n- structure of In0.53Ga0.47As grown by gas source molecular beam epitaxy. The memory state can be set by electrical and optical signal, and the memory state can be held about 10 min without supplying any electrical power.

Original languageEnglish
Pages (from-to)1065-1068
Number of pages4
JournalJournal of Crystal Growth
Volume201
DOIs
Publication statusPublished - 1999 May
Externally publishedYes

Fingerprint

Molecular beam epitaxy
Optoelectronic devices
Gases
Data storage equipment
gases
Gas source molecular beam epitaxy
supplying
optical communication
molecular beam epitaxy
switches
Switches

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Delta p+-doped InGaAs grown by gas source MBE for novel optoelectronic memory. / Sakata, H.; Nagao, Y.; Matsushima, Yuichi.

In: Journal of Crystal Growth, Vol. 201, 05.1999, p. 1065-1068.

Research output: Contribution to journalArticle

Sakata, H. ; Nagao, Y. ; Matsushima, Yuichi. / Delta p+-doped InGaAs grown by gas source MBE for novel optoelectronic memory. In: Journal of Crystal Growth. 1999 ; Vol. 201. pp. 1065-1068.
@article{3d78fe26d25f40cd848249765ae6b9c8,
title = "Delta p+-doped InGaAs grown by gas source MBE for novel optoelectronic memory",
abstract = "We report a novel optoelectronic memory characteristic in `Symmetric Triangular-barrier Optoelectronic Switch (S-TOPS)', which consists of a symmetric n+-i-δp+-i-n- structure of In0.53Ga0.47As grown by gas source molecular beam epitaxy. The memory state can be set by electrical and optical signal, and the memory state can be held about 10 min without supplying any electrical power.",
author = "H. Sakata and Y. Nagao and Yuichi Matsushima",
year = "1999",
month = "5",
doi = "10.1016/S0022-0248(98)01523-1",
language = "English",
volume = "201",
pages = "1065--1068",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

TY - JOUR

T1 - Delta p+-doped InGaAs grown by gas source MBE for novel optoelectronic memory

AU - Sakata, H.

AU - Nagao, Y.

AU - Matsushima, Yuichi

PY - 1999/5

Y1 - 1999/5

N2 - We report a novel optoelectronic memory characteristic in `Symmetric Triangular-barrier Optoelectronic Switch (S-TOPS)', which consists of a symmetric n+-i-δp+-i-n- structure of In0.53Ga0.47As grown by gas source molecular beam epitaxy. The memory state can be set by electrical and optical signal, and the memory state can be held about 10 min without supplying any electrical power.

AB - We report a novel optoelectronic memory characteristic in `Symmetric Triangular-barrier Optoelectronic Switch (S-TOPS)', which consists of a symmetric n+-i-δp+-i-n- structure of In0.53Ga0.47As grown by gas source molecular beam epitaxy. The memory state can be set by electrical and optical signal, and the memory state can be held about 10 min without supplying any electrical power.

UR - http://www.scopus.com/inward/record.url?scp=0032659942&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032659942&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(98)01523-1

DO - 10.1016/S0022-0248(98)01523-1

M3 - Article

AN - SCOPUS:0032659942

VL - 201

SP - 1065

EP - 1068

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -