Delta p+-doped InGaAs grown by gas source MBE for novel optoelectronic memory

H. Sakata, Y. Nagao, Yuichi Matsushima

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We report a novel optoelectronic memory characteristic in `Symmetric Triangular-barrier Optoelectronic Switch (S-TOPS)', which consists of a symmetric n+-i-δp+-i-n- structure of In0.53Ga0.47As grown by gas source molecular beam epitaxy. The memory state can be set by electrical and optical signal, and the memory state can be held about 10 min without supplying any electrical power.

Original languageEnglish
Pages (from-to)1065-1068
Number of pages4
JournalJournal of Crystal Growth
Volume201
DOIs
Publication statusPublished - 1999 May
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics

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