Demonstration of transconductance enhancement on (110) and (001) strained-nanowire FETs

A. Seike, H. Takai, I. Tsuchida, J. Masuda, D. Kosemura, A. Ogura, T. Watanabe, I. Ohdomari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Enhancement of transconductance for strained nanowire transistors (s-nwFETs) on (001) and (110) planes are demonstrated by evaluating Id s-Vbg curves of the devices. Normalized transconductance, gm *, for <100> direction s-nwFETs is enhanced by a factor of 2.16 for n-type on (001) plane and 1.83 for p-type on (110) plane. This is due to the lighter effective mass of electrons/holes along the selected channel direction.

Original languageEnglish
Title of host publicationECS Transactions - Physics and Technology of High-k Gate Dielectrics 7
Pages427-430
Number of pages4
Edition6
DOIs
Publication statusPublished - 2009 Dec 1
Event7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria
Duration: 2009 Oct 52009 Oct 7

Publication series

NameECS Transactions
Number6
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
CountryAustria
CityVienna
Period09/10/509/10/7

ASJC Scopus subject areas

  • Engineering(all)

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    Seike, A., Takai, H., Tsuchida, I., Masuda, J., Kosemura, D., Ogura, A., Watanabe, T., & Ohdomari, I. (2009). Demonstration of transconductance enhancement on (110) and (001) strained-nanowire FETs. In ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7 (6 ed., pp. 427-430). (ECS Transactions; Vol. 25, No. 6). https://doi.org/10.1149/1.3206641