Demonstration of transconductance enhancement on (110) and (001) strained-nanowire FETs

A. Seike, H. Takai, I. Tsuchida, J. Masuda, D. Kosemura, A. Ogura, Takanobu Watanabe, I. Ohdomari

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Enhancement of transconductance for strained nanowire transistors (s-nwFETs) on (001) and (110) planes are demonstrated by evaluating Id s-Vbg curves of the devices. Normalized transconductance, gm *, for <100> direction s-nwFETs is enhanced by a factor of 2.16 for n-type on (001) plane and 1.83 for p-type on (110) plane. This is due to the lighter effective mass of electrons/holes along the selected channel direction.

    Original languageEnglish
    Title of host publicationECS Transactions
    Pages427-430
    Number of pages4
    Volume25
    Edition6
    DOIs
    Publication statusPublished - 2009
    Event7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna
    Duration: 2009 Oct 52009 Oct 7

    Other

    Other7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
    CityVienna
    Period09/10/509/10/7

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    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    Seike, A., Takai, H., Tsuchida, I., Masuda, J., Kosemura, D., Ogura, A., Watanabe, T., & Ohdomari, I. (2009). Demonstration of transconductance enhancement on (110) and (001) strained-nanowire FETs. In ECS Transactions (6 ed., Vol. 25, pp. 427-430) https://doi.org/10.1149/1.3206641