Dependence of current rise time on laser-triggered discharge plasma

Soowon Lim, Takashi Kamohara, S. Hamid R. Hosseini, Sunao Katsuki

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A powerful, stable extreme ultraviolet (EUV) source is the most important component for EUV lithography and EUV mask inspection. Here, we investigate the characteristics of laser-triggered discharge plasma at three different current rise times, fast, middle and slow. A height-adjustable coaxial birdcage was used to change circuit inductance. The rise time was varied between 30 ns-55 ns with peak current of 10 kA. The time-integrated EUV (at 13.5 nm in 2% bandwidth) intensity for the fast rise time was found to be 55% stronger than that of the slow rise time despite its lower energy. A high-speed Mach-Zehnder interferogram and visible imaging of the pinch plasma were employed to discuss plasma compression processes qualitatively and quantitatively. Also discharge produced debris was investigated using a silicon-crystal witness plate. The fast rise current was found to have advantages such as lower debris, higher EUV intensity, and possibility of suppressing instability in comparison with the slow rise time. As expected, total debris amounts lessened proportionally to the primary charged energy, as found from a comparison of fast and slow rise currents.

Original languageEnglish
Article number295207
JournalJournal of Physics D: Applied Physics
Volume49
Issue number29
DOIs
Publication statusPublished - 2016 Jul 1
Externally publishedYes

Keywords

  • extreme ultraviolet
  • laser-triggered discharge
  • pulsed high-current
  • tin plasmas
  • Z-pinch

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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