We study spectral and far-field characteristics of lasing emission from stadium-shaped semiconductor (InGaAsP) microlasers. We demonstrate that the correspondence between a lasing far-field emission pattern and the result of a ray simulation becomes better as the number of lasing modes increases. This phenomenon is reproduced in the wave calculation of the cavity modes.
|Number of pages||6|
|Publication status||Published - 2008 Oct 27|
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics