Dependence of far-field characteristics on the number of lasing modes in stadium-shaped InGaAsP microlasers

Muhan Choi, Susumu Shinohara, Takahisa Harayama

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We study spectral and far-field characteristics of lasing emission from stadium-shaped semiconductor (InGaAsP) microlasers. We demonstrate that the correspondence between a lasing far-field emission pattern and the result of a ray simulation becomes better as the number of lasing modes increases. This phenomenon is reproduced in the wave calculation of the cavity modes.

Original languageEnglish
Pages (from-to)17554-17559
Number of pages6
JournalOptics Express
Issue number22
Publication statusPublished - 2008 Oct 27
Externally publishedYes


ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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