Dependence of far-field characteristics on the number of lasing modes in stadium-shaped InGaAsP microlasers

Muhan Choi; Susumu Shinohara; Takahisa Harayama

doi:10.1364/OE.16.017554

Dependence of far-field characteristics on the number of lasing modes in stadium-shaped InGaAsP microlasers

Muhan Choi^*, Susumu Shinohara, Takahisa Harayama

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

We study spectral and far-field characteristics of lasing emission from stadium-shaped semiconductor (InGaAsP) microlasers. We demonstrate that the correspondence between a lasing far-field emission pattern and the result of a ray simulation becomes better as the number of lasing modes increases. This phenomenon is reproduced in the wave calculation of the cavity modes.

Original language	English
Pages (from-to)	17554-17559
Number of pages	6
Journal	Optics Express
Volume	16
Issue number	22
DOIs	https://doi.org/10.1364/OE.16.017554
Publication status	Published - 2008 Oct 27
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1364/OE.16.017554

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title = "Dependence of far-field characteristics on the number of lasing modes in stadium-shaped InGaAsP microlasers",

abstract = "We study spectral and far-field characteristics of lasing emission from stadium-shaped semiconductor (InGaAsP) microlasers. We demonstrate that the correspondence between a lasing far-field emission pattern and the result of a ray simulation becomes better as the number of lasing modes increases. This phenomenon is reproduced in the wave calculation of the cavity modes.",

author = "Muhan Choi and Susumu Shinohara and Takahisa Harayama",

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AU - Shinohara, Susumu

AU - Harayama, Takahisa

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Y1 - 2008/10/27

N2 - We study spectral and far-field characteristics of lasing emission from stadium-shaped semiconductor (InGaAsP) microlasers. We demonstrate that the correspondence between a lasing far-field emission pattern and the result of a ray simulation becomes better as the number of lasing modes increases. This phenomenon is reproduced in the wave calculation of the cavity modes.

AB - We study spectral and far-field characteristics of lasing emission from stadium-shaped semiconductor (InGaAsP) microlasers. We demonstrate that the correspondence between a lasing far-field emission pattern and the result of a ray simulation becomes better as the number of lasing modes increases. This phenomenon is reproduced in the wave calculation of the cavity modes.

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Dependence of far-field characteristics on the number of lasing modes in stadium-shaped InGaAsP microlasers

Abstract

ASJC Scopus subject areas

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