Dependence of photoluminescence characteristics of thermally oxidized hydrogenated amorphous silicon nanoball films on ion bombardment energy

Isamu Kato, Takayuki Matsumoto

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Using a double-tubed coaxial-line-type microwave plasma chemical vapor deposition (MPCVD) system, hydrogenated amorphous silicon (a-Si:H) nanoball films, which include Si nanocrystals, can be fabricated. Photoluminescence (PL) is observed at room temperature after the a-Si:H nanoball film is oxidized by heating in air or pure oxygen gas. We fabricate a-Si:H nanoball films with various the DC bias voltages applied to the substrate of this system and discuss the influence of the ion bombardment energy on the film properties and the PL characteristics. From the calculations it is clear that the number of Si nanocrystals existing per unit area of the a-Si:H nanoball film is almost proportional to the PL intensity. We propose the creation mechanism of Si nanocrystals and calculate the number of Si nanocrystals. From the calculation result it is clear that one a-Si:H nanoball contains 4 to 12 Si nanocrystals.

Original languageEnglish
Pages (from-to)5205-5209
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number8
Publication statusPublished - 2002 Aug

Fingerprint

Ion bombardment
silicon films
Amorphous silicon
Nanocrystals
amorphous silicon
bombardment
Photoluminescence
nanocrystals
photoluminescence
ions
energy
Bias voltage
Chemical vapor deposition
direct current
Microwaves
vapor deposition
Plasmas
Heating
microwaves
heating

Keywords

  • a-Si:H nanoball
  • Chemical vapor deposition
  • DC bias
  • Ion bombardment
  • Microwave plasma
  • Photoluminescence
  • Si nanocrystal
  • Thermal oxidation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "Using a double-tubed coaxial-line-type microwave plasma chemical vapor deposition (MPCVD) system, hydrogenated amorphous silicon (a-Si:H) nanoball films, which include Si nanocrystals, can be fabricated. Photoluminescence (PL) is observed at room temperature after the a-Si:H nanoball film is oxidized by heating in air or pure oxygen gas. We fabricate a-Si:H nanoball films with various the DC bias voltages applied to the substrate of this system and discuss the influence of the ion bombardment energy on the film properties and the PL characteristics. From the calculations it is clear that the number of Si nanocrystals existing per unit area of the a-Si:H nanoball film is almost proportional to the PL intensity. We propose the creation mechanism of Si nanocrystals and calculate the number of Si nanocrystals. From the calculation result it is clear that one a-Si:H nanoball contains 4 to 12 Si nanocrystals.",
keywords = "a-Si:H nanoball, Chemical vapor deposition, DC bias, Ion bombardment, Microwave plasma, Photoluminescence, Si nanocrystal, Thermal oxidation",
author = "Isamu Kato and Takayuki Matsumoto",
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TY - JOUR

T1 - Dependence of photoluminescence characteristics of thermally oxidized hydrogenated amorphous silicon nanoball films on ion bombardment energy

AU - Kato, Isamu

AU - Matsumoto, Takayuki

PY - 2002/8

Y1 - 2002/8

N2 - Using a double-tubed coaxial-line-type microwave plasma chemical vapor deposition (MPCVD) system, hydrogenated amorphous silicon (a-Si:H) nanoball films, which include Si nanocrystals, can be fabricated. Photoluminescence (PL) is observed at room temperature after the a-Si:H nanoball film is oxidized by heating in air or pure oxygen gas. We fabricate a-Si:H nanoball films with various the DC bias voltages applied to the substrate of this system and discuss the influence of the ion bombardment energy on the film properties and the PL characteristics. From the calculations it is clear that the number of Si nanocrystals existing per unit area of the a-Si:H nanoball film is almost proportional to the PL intensity. We propose the creation mechanism of Si nanocrystals and calculate the number of Si nanocrystals. From the calculation result it is clear that one a-Si:H nanoball contains 4 to 12 Si nanocrystals.

AB - Using a double-tubed coaxial-line-type microwave plasma chemical vapor deposition (MPCVD) system, hydrogenated amorphous silicon (a-Si:H) nanoball films, which include Si nanocrystals, can be fabricated. Photoluminescence (PL) is observed at room temperature after the a-Si:H nanoball film is oxidized by heating in air or pure oxygen gas. We fabricate a-Si:H nanoball films with various the DC bias voltages applied to the substrate of this system and discuss the influence of the ion bombardment energy on the film properties and the PL characteristics. From the calculations it is clear that the number of Si nanocrystals existing per unit area of the a-Si:H nanoball film is almost proportional to the PL intensity. We propose the creation mechanism of Si nanocrystals and calculate the number of Si nanocrystals. From the calculation result it is clear that one a-Si:H nanoball contains 4 to 12 Si nanocrystals.

KW - a-Si:H nanoball

KW - Chemical vapor deposition

KW - DC bias

KW - Ion bombardment

KW - Microwave plasma

KW - Photoluminescence

KW - Si nanocrystal

KW - Thermal oxidation

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