Dependence of resonant electron and hole tunnelling times between quantum wells on barrier thickness

A. P. Heberle, X. Q. Zhou, A. Tackeuchi, W. W. Ruhle, K. Kohler

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

We investigated resonant tunnelling of electrons and holes between coupled quantum wells using time-resolved luminescence spectroscopy. Exponential dependence of tunnelling times on barrier width is observed for electrons but not for holes. The tunnelling times of electrons are correctly described by a model which takes into account inhomogeneous broadening.

Original languageEnglish
Article number032
Pages (from-to)519-522
Number of pages4
JournalSemiconductor Science and Technology
Volume9
Issue number5 S
DOIs
Publication statusPublished - 1994 Dec 1

    Fingerprint

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this