Dependence of resonant electron and hole tunnelling times between quantum wells on barrier thickness

A. P. Heberle, X. Q. Zhou, Atsushi Tackeuchi, W. W. Ruhle, K. Kohler

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

We investigated resonant tunnelling of electrons and holes between coupled quantum wells using time-resolved luminescence spectroscopy. Exponential dependence of tunnelling times on barrier with is observed for electrons but not for holes. The tunnelling times of electrons are correctly described by model which takes into account inhomogeneous broadening.

Original languageEnglish
Pages (from-to)519-522
Number of pages4
JournalSemiconductor Science and Technology
Volume9
Issue number5 SUPPL
Publication statusPublished - 1994 May
Externally publishedYes

Fingerprint

electron tunneling
Semiconductor quantum wells
quantum wells
Electrons
Resonant tunneling
electrons
Electron tunneling
resonant tunneling
Luminescence
Spectroscopy
luminescence
spectroscopy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials

Cite this

Dependence of resonant electron and hole tunnelling times between quantum wells on barrier thickness. / Heberle, A. P.; Zhou, X. Q.; Tackeuchi, Atsushi; Ruhle, W. W.; Kohler, K.

In: Semiconductor Science and Technology, Vol. 9, No. 5 SUPPL, 05.1994, p. 519-522.

Research output: Contribution to journalArticle

Heberle, A. P. ; Zhou, X. Q. ; Tackeuchi, Atsushi ; Ruhle, W. W. ; Kohler, K. / Dependence of resonant electron and hole tunnelling times between quantum wells on barrier thickness. In: Semiconductor Science and Technology. 1994 ; Vol. 9, No. 5 SUPPL. pp. 519-522.
@article{08f50922860a4fc891bc95d98d58a428,
title = "Dependence of resonant electron and hole tunnelling times between quantum wells on barrier thickness",
abstract = "We investigated resonant tunnelling of electrons and holes between coupled quantum wells using time-resolved luminescence spectroscopy. Exponential dependence of tunnelling times on barrier with is observed for electrons but not for holes. The tunnelling times of electrons are correctly described by model which takes into account inhomogeneous broadening.",
author = "Heberle, {A. P.} and Zhou, {X. Q.} and Atsushi Tackeuchi and Ruhle, {W. W.} and K. Kohler",
year = "1994",
month = "5",
language = "English",
volume = "9",
pages = "519--522",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "5 SUPPL",

}

TY - JOUR

T1 - Dependence of resonant electron and hole tunnelling times between quantum wells on barrier thickness

AU - Heberle, A. P.

AU - Zhou, X. Q.

AU - Tackeuchi, Atsushi

AU - Ruhle, W. W.

AU - Kohler, K.

PY - 1994/5

Y1 - 1994/5

N2 - We investigated resonant tunnelling of electrons and holes between coupled quantum wells using time-resolved luminescence spectroscopy. Exponential dependence of tunnelling times on barrier with is observed for electrons but not for holes. The tunnelling times of electrons are correctly described by model which takes into account inhomogeneous broadening.

AB - We investigated resonant tunnelling of electrons and holes between coupled quantum wells using time-resolved luminescence spectroscopy. Exponential dependence of tunnelling times on barrier with is observed for electrons but not for holes. The tunnelling times of electrons are correctly described by model which takes into account inhomogeneous broadening.

UR - http://www.scopus.com/inward/record.url?scp=0028427583&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028427583&partnerID=8YFLogxK

M3 - Article

VL - 9

SP - 519

EP - 522

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 5 SUPPL

ER -