Deposition mechanism of a-Si: H films fabricated by coaxial-line-type microwave plasma chemical vapour deposition

Isamu Kato, Kazuhisa Hatanaka, Tetsuya Tatsumi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Hydrogenated amorphous silicon (a-Si:H) films are fabricated outside of hydrogen or argon plasma by using a double-tubed, coaxial-line-type, microwave plasma chemical vapor deposition (CVD) system. Thermal stability of the films is investigated by annealing. A deposition mechanism and a hydrogen evolution mechanism are proposed. By using hydrogen discharge, good quality, thermally stable films are obtained even at room temperature. In this case, silane radicals have large surface mobility due to the covering effect of hydrogen atoms and the soft-landing of silane radicals on the film's surface. The large surface mobility allows the silane radicals to move and to from bands with dangling bonds having a low potential energy and hence contributes to atructural stabilization.

Original languageEnglish
Pages (from-to)1-12
Number of pages12
JournalWaseda Daigaku Rikogaku Kenkyusho Hokoku/Bulletin of Science and Engineering Research Laboratory, Waseda University
Issue number123
Publication statusPublished - 1989

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Chemical vapor deposition
Microwaves
Plasmas
Hydrogen
Silanes
Dangling bonds
Potential energy
Landing
Amorphous silicon
Argon
Thermodynamic stability
Stabilization
Annealing
Atoms
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

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T1 - Deposition mechanism of a-Si

T2 - H films fabricated by coaxial-line-type microwave plasma chemical vapour deposition

AU - Kato, Isamu

AU - Hatanaka, Kazuhisa

AU - Tatsumi, Tetsuya

PY - 1989

Y1 - 1989

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AB - Hydrogenated amorphous silicon (a-Si:H) films are fabricated outside of hydrogen or argon plasma by using a double-tubed, coaxial-line-type, microwave plasma chemical vapor deposition (CVD) system. Thermal stability of the films is investigated by annealing. A deposition mechanism and a hydrogen evolution mechanism are proposed. By using hydrogen discharge, good quality, thermally stable films are obtained even at room temperature. In this case, silane radicals have large surface mobility due to the covering effect of hydrogen atoms and the soft-landing of silane radicals on the film's surface. The large surface mobility allows the silane radicals to move and to from bands with dangling bonds having a low potential energy and hence contributes to atructural stabilization.

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