Deposition mechanism of trace metals on silicon wafer surfaces in ultra pure water

Takayuki Homma, Jun Tsukano, Tetsuya Osaka, Masaharu Watanabe, Kiyoshi Nagai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Spontaneous deposition of trace metal contaminants such as Cu onto silicon wafer surfaces in ultra pure water (UPW) was investigated, focusing upon the reaction pathways of their deposition processes. Scanning probe microscopy analysis revealed that 10-20 nm diameter Cu particles were formed by reductive deposition of ionic species to the metals, which was enhanced under deoxygenated condition. On the other hand, dissolved oxygen enhanced the formation of oxide layer at silicon surface as well as inclusion of the metal species into the layer to develop rougher surface. These variation in the characteristics of metal contaminants such as chemical state and dispersion condition in microscopic scale, caused by the difference in dissolved oxygen concentration, should be one of the significant issues to optimize precision device processes.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsC.L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer, H.J. Dawson
Pages670-676
Number of pages7
Volume4218
Publication statusPublished - 2000
EventHigh Purity Silicon VI - Phoenix, AZ, United States
Duration: 2000 Oct 222000 Oct 27

Other

OtherHigh Purity Silicon VI
CountryUnited States
CityPhoenix, AZ
Period00/10/2200/10/27

Fingerprint

Silicon wafers
wafers
Dissolved oxygen
silicon
Metals
metals
Impurities
water
contaminants
Water
Scanning probe microscopy
oxygen
Silicon
Oxides
inclusions
microscopy
scanning
oxides
Trace metals
probes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Homma, T., Tsukano, J., Osaka, T., Watanabe, M., & Nagai, K. (2000). Deposition mechanism of trace metals on silicon wafer surfaces in ultra pure water. In C. L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer, & H. J. Dawson (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 4218, pp. 670-676)

Deposition mechanism of trace metals on silicon wafer surfaces in ultra pure water. / Homma, Takayuki; Tsukano, Jun; Osaka, Tetsuya; Watanabe, Masaharu; Nagai, Kiyoshi.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / C.L. Claeys; P. Rai-Choudhury; M. Watanabe; P. Stallhofer; H.J. Dawson. Vol. 4218 2000. p. 670-676.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Homma, T, Tsukano, J, Osaka, T, Watanabe, M & Nagai, K 2000, Deposition mechanism of trace metals on silicon wafer surfaces in ultra pure water. in CL Claeys, P Rai-Choudhury, M Watanabe, P Stallhofer & HJ Dawson (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 4218, pp. 670-676, High Purity Silicon VI, Phoenix, AZ, United States, 00/10/22.
Homma T, Tsukano J, Osaka T, Watanabe M, Nagai K. Deposition mechanism of trace metals on silicon wafer surfaces in ultra pure water. In Claeys CL, Rai-Choudhury P, Watanabe M, Stallhofer P, Dawson HJ, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 4218. 2000. p. 670-676
Homma, Takayuki ; Tsukano, Jun ; Osaka, Tetsuya ; Watanabe, Masaharu ; Nagai, Kiyoshi. / Deposition mechanism of trace metals on silicon wafer surfaces in ultra pure water. Proceedings of SPIE - The International Society for Optical Engineering. editor / C.L. Claeys ; P. Rai-Choudhury ; M. Watanabe ; P. Stallhofer ; H.J. Dawson. Vol. 4218 2000. pp. 670-676
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