Deposition of AgGaTe2 on sapphire substrates by closed space sublimation

Aya Uruno, Ayaka Usui, Masakazu Kobayashi

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    AgGaTe2 layers were grown on a-plane sapphire substrates by a closed space sublimation method. Various samples were prepared with varied source temperature, holding time and temperature differential. The variation of source temperature was used primarily to improve the stoichiometry of the film. Grown films were evaluated by XRD measurements. AgGaTe2 layers were grown only at low source temperature (about 780 °C), and to have strong preference for the (103) orientation. By using the pole figure, it is possible to study the orientation of the film, and the substrate surface arrangement has resulted in this unique relationship.

    Original languageEnglish
    Pages (from-to)1389-1392
    Number of pages4
    JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
    Volume10
    Issue number11
    DOIs
    Publication statusPublished - 2013 Nov

    Fingerprint

    sublimation
    sapphire
    temperature
    stoichiometry
    poles

    Keywords

    • AgGaTe2
    • Chalcopyrite
    • Closed space sublimation
    • Pole figure
    • Sapphire

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    Deposition of AgGaTe2 on sapphire substrates by closed space sublimation. / Uruno, Aya; Usui, Ayaka; Kobayashi, Masakazu.

    In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 10, No. 11, 11.2013, p. 1389-1392.

    Research output: Contribution to journalArticle

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