Deposition of AgGaTe2 on sapphire substrates by closed space sublimation

Aya Uruno, Ayaka Usui, Masakazu Kobayashi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

AgGaTe2 layers were grown on a-plane sapphire substrates by a closed space sublimation method. Various samples were prepared with varied source temperature, holding time and temperature differential. The variation of source temperature was used primarily to improve the stoichiometry of the film. Grown films were evaluated by XRD measurements. AgGaTe2 layers were grown only at low source temperature (about 780 °C), and to have strong preference for the (103) orientation. By using the pole figure, it is possible to study the orientation of the film, and the substrate surface arrangement has resulted in this unique relationship.

Original languageEnglish
Pages (from-to)1389-1392
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume10
Issue number11
DOIs
Publication statusPublished - 2013 Nov 1

Keywords

  • AgGaTe2
  • Chalcopyrite
  • Closed space sublimation
  • Pole figure
  • Sapphire

ASJC Scopus subject areas

  • Condensed Matter Physics

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