Deposition of hydrogenated amorphous silicon films using a microwave plasma chemical vapor deposition method with DC bias

Kiyotaka Kato, Isamu Kato

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A DC bias is applied to a substrate placed in spatial afterglow plasma created by the double-tubed coaxial line-type microwave plasma chemical vapor deposition system. This DC bias method enables us to control only the ion bombardment energy without changing the ion flux density and the radical density. Hydrogenated amorphous silicon films were deposited, varying only the ion bombardment energy. With increasing ion bombardment energy, the dihydride bonds Si-H2 and the polyhydride bonds (Si-H2)n decrease, and the monohydride bonds Si-H and the film density increase.

Original languageEnglish
Pages (from-to)1245-1247
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume30
Issue number6
Publication statusPublished - 1991 Jun

Fingerprint

Ion bombardment
silicon films
Amorphous silicon
amorphous silicon
Chemical vapor deposition
direct current
Microwaves
vapor deposition
Plasmas
bombardment
microwaves
ions
dihydrides
afterglows
Fluxes
energy
flux density
Ions
Substrates

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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