Abstract
We designed and fabricated lateral-current-injection (LCI) Fabry-Perot (FP) lasers for the 1.3-μm wavelength region. The devices were fabricated using selective doping by means of thermal diffusion and ion implantation to make pn junctions. To increase the optical confinement factor in the active region, we used an InGaAlAs-based 20-quantum-well structure. The device exhibited a threshold current of 16 mA and differential efficiency of 47% for a 400-μm long and 0.5-μm wide cavity. We also measured the relative intensity noise (RIN) spectrum to obtain parameters for the direct modulation. The LCI FP laser provided both high output power and high relaxation oscillation frequency.
| Original language | English |
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| Title of host publication | 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781509019649 |
| DOIs | |
| Publication status | Published - 2016 Aug 1 |
| Externally published | Yes |
| Event | 2016 Compound Semiconductor Week, CSW 2016 - Toyama, Japan Duration: 2016 Jun 26 → 2016 Jun 30 |
Publication series
| Name | 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016 |
|---|
Other
| Other | 2016 Compound Semiconductor Week, CSW 2016 |
|---|---|
| Country | Japan |
| City | Toyama |
| Period | 16/6/26 → 16/6/30 |
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Keywords
- direct modulation
- lateral current injection
- semiconductor laser
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Design and fabrication of directly-modulated 1.3-μm lateral-current-injection lasers. / Hasebe, Koichi; Nishinaka, Junichi; Fujii, Takuro; Takeda, Koji; Yamamoto, Tsuyoshi; Kakitsuka, Takaaki; Matsuo, Shinji.
2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7528753 (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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TY - GEN
T1 - Design and fabrication of directly-modulated 1.3-μm lateral-current-injection lasers
AU - Hasebe, Koichi
AU - Nishinaka, Junichi
AU - Fujii, Takuro
AU - Takeda, Koji
AU - Yamamoto, Tsuyoshi
AU - Kakitsuka, Takaaki
AU - Matsuo, Shinji
PY - 2016/8/1
Y1 - 2016/8/1
N2 - We designed and fabricated lateral-current-injection (LCI) Fabry-Perot (FP) lasers for the 1.3-μm wavelength region. The devices were fabricated using selective doping by means of thermal diffusion and ion implantation to make pn junctions. To increase the optical confinement factor in the active region, we used an InGaAlAs-based 20-quantum-well structure. The device exhibited a threshold current of 16 mA and differential efficiency of 47% for a 400-μm long and 0.5-μm wide cavity. We also measured the relative intensity noise (RIN) spectrum to obtain parameters for the direct modulation. The LCI FP laser provided both high output power and high relaxation oscillation frequency.
AB - We designed and fabricated lateral-current-injection (LCI) Fabry-Perot (FP) lasers for the 1.3-μm wavelength region. The devices were fabricated using selective doping by means of thermal diffusion and ion implantation to make pn junctions. To increase the optical confinement factor in the active region, we used an InGaAlAs-based 20-quantum-well structure. The device exhibited a threshold current of 16 mA and differential efficiency of 47% for a 400-μm long and 0.5-μm wide cavity. We also measured the relative intensity noise (RIN) spectrum to obtain parameters for the direct modulation. The LCI FP laser provided both high output power and high relaxation oscillation frequency.
KW - direct modulation
KW - lateral current injection
KW - semiconductor laser
UR - http://www.scopus.com/inward/record.url?scp=84992029474&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84992029474&partnerID=8YFLogxK
U2 - 10.1109/ICIPRM.2016.7528753
DO - 10.1109/ICIPRM.2016.7528753
M3 - Conference contribution
T3 - 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
BT - 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
PB - Institute of Electrical and Electronics Engineers Inc.
ER -