@inproceedings{b06a58e0183a4009be9552da4cd8cd65,
title = "Design and fabrication of directly-modulated 1.3-μm lateral-current-injection lasers",
abstract = "We designed and fabricated lateral-current-injection (LCI) Fabry-Perot (FP) lasers for the 1.3-μm wavelength region. The devices were fabricated using selective doping by means of thermal diffusion and ion implantation to make pn junctions. To increase the optical confinement factor in the active region, we used an InGaAlAs-based 20-quantum-well structure. The device exhibited a threshold current of 16 mA and differential efficiency of 47% for a 400-μm long and 0.5-μm wide cavity. We also measured the relative intensity noise (RIN) spectrum to obtain parameters for the direct modulation. The LCI FP laser provided both high output power and high relaxation oscillation frequency.",
keywords = "direct modulation, lateral current injection, semiconductor laser",
author = "Koichi Hasebe and Junichi Nishinaka and Takuro Fujii and Koji Takeda and Tsuyoshi Yamamoto and Takaaki Kakitsuka and Shinji Matsuo",
year = "2016",
month = aug,
day = "1",
doi = "10.1109/ICIPRM.2016.7528753",
language = "English",
series = "2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016",
note = "2016 Compound Semiconductor Week, CSW 2016 ; Conference date: 26-06-2016 Through 30-06-2016",
}