Design and fabrication of directly-modulated 1.3-μm lateral-current-injection lasers

Koichi Hasebe, Junichi Nishinaka, Takuro Fujii, Koji Takeda, Tsuyoshi Yamamoto, Takaaki Kakitsuka, Shinji Matsuo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We designed and fabricated lateral-current-injection (LCI) Fabry-Perot (FP) lasers for the 1.3-μm wavelength region. The devices were fabricated using selective doping by means of thermal diffusion and ion implantation to make pn junctions. To increase the optical confinement factor in the active region, we used an InGaAlAs-based 20-quantum-well structure. The device exhibited a threshold current of 16 mA and differential efficiency of 47% for a 400-μm long and 0.5-μm wide cavity. We also measured the relative intensity noise (RIN) spectrum to obtain parameters for the direct modulation. The LCI FP laser provided both high output power and high relaxation oscillation frequency.

Original languageEnglish
Title of host publication2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509019649
DOIs
Publication statusPublished - 2016 Aug 1
Externally publishedYes
Event2016 Compound Semiconductor Week, CSW 2016 - Toyama, Japan
Duration: 2016 Jun 262016 Jun 30

Publication series

Name2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016

Other

Other2016 Compound Semiconductor Week, CSW 2016
CountryJapan
CityToyama
Period16/6/2616/6/30

Fingerprint

Injection lasers
Fabrication
Thermal diffusion
Lasers
Ion implantation
Semiconductor quantum wells
Doping (additives)
Modulation
Wavelength

Keywords

  • direct modulation
  • lateral current injection
  • semiconductor laser

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Hasebe, K., Nishinaka, J., Fujii, T., Takeda, K., Yamamoto, T., Kakitsuka, T., & Matsuo, S. (2016). Design and fabrication of directly-modulated 1.3-μm lateral-current-injection lasers. In 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016 [7528753] (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.2016.7528753

Design and fabrication of directly-modulated 1.3-μm lateral-current-injection lasers. / Hasebe, Koichi; Nishinaka, Junichi; Fujii, Takuro; Takeda, Koji; Yamamoto, Tsuyoshi; Kakitsuka, Takaaki; Matsuo, Shinji.

2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7528753 (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hasebe, K, Nishinaka, J, Fujii, T, Takeda, K, Yamamoto, T, Kakitsuka, T & Matsuo, S 2016, Design and fabrication of directly-modulated 1.3-μm lateral-current-injection lasers. in 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016., 7528753, 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, Institute of Electrical and Electronics Engineers Inc., 2016 Compound Semiconductor Week, CSW 2016, Toyama, Japan, 16/6/26. https://doi.org/10.1109/ICIPRM.2016.7528753
Hasebe K, Nishinaka J, Fujii T, Takeda K, Yamamoto T, Kakitsuka T et al. Design and fabrication of directly-modulated 1.3-μm lateral-current-injection lasers. In 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7528753. (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016). https://doi.org/10.1109/ICIPRM.2016.7528753
Hasebe, Koichi ; Nishinaka, Junichi ; Fujii, Takuro ; Takeda, Koji ; Yamamoto, Tsuyoshi ; Kakitsuka, Takaaki ; Matsuo, Shinji. / Design and fabrication of directly-modulated 1.3-μm lateral-current-injection lasers. 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016).
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