Design and optimization of hybrid decoupling scheme for charge pump circuit in non-volatile memory application

Mengshu Huang, Leona Okamura, Tsutomu Yoshihara

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    A high area efficiency hybrid decoupling scheme using both passive and active capacitors is designed to suppress the program noise of charge pump in non-volatile memory. Through the decoupling impedance analysis and noise power calculation, an optimized ratio between the passive and active capacitors is obtained to achieve maximum noise suppression performance. The proposed hybrid decoupling charge pump is fabricated in 0.18μm technology with 1V supply voltage. The results show a nearly 20dB noise-suppression-ratio (NSR) to the conventional method and the ripple voltage reduction is 73%. The area overhead is only 2%.

    Original languageEnglish
    Title of host publication2010 International SoC Design Conference, ISOCC 2010
    Pages205-208
    Number of pages4
    DOIs
    Publication statusPublished - 2010
    Event2010 International SoC Design Conference, ISOCC 2010 - Incheon
    Duration: 2010 Nov 222010 Nov 23

    Other

    Other2010 International SoC Design Conference, ISOCC 2010
    CityIncheon
    Period10/11/2210/11/23

    ASJC Scopus subject areas

    • Hardware and Architecture

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  • Cite this

    Huang, M., Okamura, L., & Yoshihara, T. (2010). Design and optimization of hybrid decoupling scheme for charge pump circuit in non-volatile memory application. In 2010 International SoC Design Conference, ISOCC 2010 (pp. 205-208). [5682935] https://doi.org/10.1109/SOCDC.2010.5682935