DESIGN CONSIDERATION OF A STATIC MEMORY CELL.

Kenji Anami, Masahiko Yoshimoto, Hirofumi Shinohara, Yoshihiro Hirata, Takao Nakano

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

Design criteria for high-density low-power static RAM cells with a four-transistor two-resistor configuration are presented. The states of the cell latch are expressed by a dc stability factor introduced from transfer curves of the inverters in the cell. The criteria feature using only static conditions for read/write/retain operations. The designed cell considering mask-misalignment measured 22. 8 multiplied by 27. 6 mu m with 2. 5 mu m layout rules. From the evaluation of dynamic characteristics, it was shown that the 16K RAM using the cell had a sufficient operating margin.

Original languageEnglish
Pages (from-to)414-418
Number of pages5
JournalIEEE Journal of Solid-State Circuits
VolumeSC-18
Issue number4
Publication statusPublished - 1983 Aug
Externally publishedYes

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Random access storage
Data storage equipment
Resistors
Masks
Transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Anami, K., Yoshimoto, M., Shinohara, H., Hirata, Y., & Nakano, T. (1983). DESIGN CONSIDERATION OF A STATIC MEMORY CELL. IEEE Journal of Solid-State Circuits, SC-18(4), 414-418.

DESIGN CONSIDERATION OF A STATIC MEMORY CELL. / Anami, Kenji; Yoshimoto, Masahiko; Shinohara, Hirofumi; Hirata, Yoshihiro; Nakano, Takao.

In: IEEE Journal of Solid-State Circuits, Vol. SC-18, No. 4, 08.1983, p. 414-418.

Research output: Contribution to journalArticle

Anami, K, Yoshimoto, M, Shinohara, H, Hirata, Y & Nakano, T 1983, 'DESIGN CONSIDERATION OF A STATIC MEMORY CELL.', IEEE Journal of Solid-State Circuits, vol. SC-18, no. 4, pp. 414-418.
Anami K, Yoshimoto M, Shinohara H, Hirata Y, Nakano T. DESIGN CONSIDERATION OF A STATIC MEMORY CELL. IEEE Journal of Solid-State Circuits. 1983 Aug;SC-18(4):414-418.
Anami, Kenji ; Yoshimoto, Masahiko ; Shinohara, Hirofumi ; Hirata, Yoshihiro ; Nakano, Takao. / DESIGN CONSIDERATION OF A STATIC MEMORY CELL. In: IEEE Journal of Solid-State Circuits. 1983 ; Vol. SC-18, No. 4. pp. 414-418.
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