Design of CMOS resonating push-push frequency doubler

Hiroshi Adachi, Mizuki Motoyoshi, Kyoya Takano, Kosuke Katayama, Shuhei Amakawa, Takeshi Yoshida, Minoru Fujishima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

This paper concerns maximizing the conversion gain of a CMOS push-push doubler, in which the drains of a pair of differentially driven MOSFETs are tied together. We propose to insert transmission lines, which act as resonators at the fundamental frequency, between the drains of the MOSFETs. In the simulation of the proposed circuit, it achieved an output power improvement of 2.2 dB at the 0 dBm input power.

Original languageEnglish
Title of host publicationIMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479936144
DOIs
Publication statusPublished - 2014 Jul 28
Externally publishedYes
Event12th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2014 - Kyoto, Japan
Duration: 2014 Jun 192014 Jun 20

Other

Other12th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2014
CountryJapan
CityKyoto
Period14/6/1914/6/20

Fingerprint

Frequency doublers
Resonators
Electric lines
Networks (circuits)

Keywords

  • CMOS
  • frequency multiplier
  • millimeter-wave

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Adachi, H., Motoyoshi, M., Takano, K., Katayama, K., Amakawa, S., Yoshida, T., & Fujishima, M. (2014). Design of CMOS resonating push-push frequency doubler. In IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai [6867082] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMFEDK.2014.6867082

Design of CMOS resonating push-push frequency doubler. / Adachi, Hiroshi; Motoyoshi, Mizuki; Takano, Kyoya; Katayama, Kosuke; Amakawa, Shuhei; Yoshida, Takeshi; Fujishima, Minoru.

IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai. Institute of Electrical and Electronics Engineers Inc., 2014. 6867082.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Adachi, H, Motoyoshi, M, Takano, K, Katayama, K, Amakawa, S, Yoshida, T & Fujishima, M 2014, Design of CMOS resonating push-push frequency doubler. in IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai., 6867082, Institute of Electrical and Electronics Engineers Inc., 12th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2014, Kyoto, Japan, 14/6/19. https://doi.org/10.1109/IMFEDK.2014.6867082
Adachi H, Motoyoshi M, Takano K, Katayama K, Amakawa S, Yoshida T et al. Design of CMOS resonating push-push frequency doubler. In IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai. Institute of Electrical and Electronics Engineers Inc. 2014. 6867082 https://doi.org/10.1109/IMFEDK.2014.6867082
Adachi, Hiroshi ; Motoyoshi, Mizuki ; Takano, Kyoya ; Katayama, Kosuke ; Amakawa, Shuhei ; Yoshida, Takeshi ; Fujishima, Minoru. / Design of CMOS resonating push-push frequency doubler. IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai. Institute of Electrical and Electronics Engineers Inc., 2014.
@inproceedings{ce537515beba4b13b433d7ea26c85653,
title = "Design of CMOS resonating push-push frequency doubler",
abstract = "This paper concerns maximizing the conversion gain of a CMOS push-push doubler, in which the drains of a pair of differentially driven MOSFETs are tied together. We propose to insert transmission lines, which act as resonators at the fundamental frequency, between the drains of the MOSFETs. In the simulation of the proposed circuit, it achieved an output power improvement of 2.2 dB at the 0 dBm input power.",
keywords = "CMOS, frequency multiplier, millimeter-wave",
author = "Hiroshi Adachi and Mizuki Motoyoshi and Kyoya Takano and Kosuke Katayama and Shuhei Amakawa and Takeshi Yoshida and Minoru Fujishima",
year = "2014",
month = "7",
day = "28",
doi = "10.1109/IMFEDK.2014.6867082",
language = "English",
booktitle = "IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

TY - GEN

T1 - Design of CMOS resonating push-push frequency doubler

AU - Adachi, Hiroshi

AU - Motoyoshi, Mizuki

AU - Takano, Kyoya

AU - Katayama, Kosuke

AU - Amakawa, Shuhei

AU - Yoshida, Takeshi

AU - Fujishima, Minoru

PY - 2014/7/28

Y1 - 2014/7/28

N2 - This paper concerns maximizing the conversion gain of a CMOS push-push doubler, in which the drains of a pair of differentially driven MOSFETs are tied together. We propose to insert transmission lines, which act as resonators at the fundamental frequency, between the drains of the MOSFETs. In the simulation of the proposed circuit, it achieved an output power improvement of 2.2 dB at the 0 dBm input power.

AB - This paper concerns maximizing the conversion gain of a CMOS push-push doubler, in which the drains of a pair of differentially driven MOSFETs are tied together. We propose to insert transmission lines, which act as resonators at the fundamental frequency, between the drains of the MOSFETs. In the simulation of the proposed circuit, it achieved an output power improvement of 2.2 dB at the 0 dBm input power.

KW - CMOS

KW - frequency multiplier

KW - millimeter-wave

UR - http://www.scopus.com/inward/record.url?scp=84934326373&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84934326373&partnerID=8YFLogxK

U2 - 10.1109/IMFEDK.2014.6867082

DO - 10.1109/IMFEDK.2014.6867082

M3 - Conference contribution

BT - IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai

PB - Institute of Electrical and Electronics Engineers Inc.

ER -