Abstract
This paper concerns maximizing the conversion gain of a CMOS push-push doubler, in which the drains of a pair of differentially driven MOSFETs are tied together. We propose to insert transmission lines, which act as resonators at the fundamental frequency, between the drains of the MOSFETs. In the simulation of the proposed circuit, it achieved an output power improvement of 2.2 dB at the 0 dBm input power.
Original language | English |
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Title of host publication | IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 9781479936144 |
DOIs | |
Publication status | Published - 2014 Jul 28 |
Externally published | Yes |
Event | 12th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2014 - Kyoto, Japan Duration: 2014 Jun 19 → 2014 Jun 20 |
Other
Other | 12th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2014 |
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Country | Japan |
City | Kyoto |
Period | 14/6/19 → 14/6/20 |
Keywords
- CMOS
- frequency multiplier
- millimeter-wave
ASJC Scopus subject areas
- Electrical and Electronic Engineering