Design of CMOS resonating push-push frequency doubler

Hiroshi Adachi; Mizuki Motoyoshi; Kyoya Takano; Kosuke Katayama; Shuhei Amakawa; Takeshi Yoshida; Minoru Fujishima

doi:10.1109/IMFEDK.2014.6867082

Design of CMOS resonating push-push frequency doubler

Hiroshi Adachi, Mizuki Motoyoshi, Kyoya Takano, Kosuke Katayama, Shuhei Amakawa, Takeshi Yoshida, Minoru Fujishima

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

This paper concerns maximizing the conversion gain of a CMOS push-push doubler, in which the drains of a pair of differentially driven MOSFETs are tied together. We propose to insert transmission lines, which act as resonators at the fundamental frequency, between the drains of the MOSFETs. In the simulation of the proposed circuit, it achieved an output power improvement of 2.2 dB at the 0 dBm input power.

Original language	English
Title of host publication	IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479936144
DOIs	https://doi.org/10.1109/IMFEDK.2014.6867082
Publication status	Published - 2014 Jul 28
Externally published	Yes
Event	12th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2014 - Kyoto, Japan Duration: 2014 Jun 19 → 2014 Jun 20

Other

Other	12th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2014
Country	Japan
City	Kyoto
Period	14/6/19 → 14/6/20

Keywords

CMOS
frequency multiplier
millimeter-wave

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/IMFEDK.2014.6867082

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Design of CMOS resonating push-push frequency doubler. / Adachi, Hiroshi; Motoyoshi, Mizuki; Takano, Kyoya; Katayama, Kosuke; Amakawa, Shuhei; Yoshida, Takeshi; Fujishima, Minoru.

IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai. Institute of Electrical and Electronics Engineers Inc., 2014. 6867082.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Adachi, H, Motoyoshi, M, Takano, K, Katayama, K, Amakawa, S, Yoshida, T & Fujishima, M 2014, Design of CMOS resonating push-push frequency doubler. in IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai., 6867082, Institute of Electrical and Electronics Engineers Inc., 12th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2014, Kyoto, Japan, 14/6/19. https://doi.org/10.1109/IMFEDK.2014.6867082

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title = "Design of CMOS resonating push-push frequency doubler",

abstract = "This paper concerns maximizing the conversion gain of a CMOS push-push doubler, in which the drains of a pair of differentially driven MOSFETs are tied together. We propose to insert transmission lines, which act as resonators at the fundamental frequency, between the drains of the MOSFETs. In the simulation of the proposed circuit, it achieved an output power improvement of 2.2 dB at the 0 dBm input power.",

keywords = "CMOS, frequency multiplier, millimeter-wave",

author = "Hiroshi Adachi and Mizuki Motoyoshi and Kyoya Takano and Kosuke Katayama and Shuhei Amakawa and Takeshi Yoshida and Minoru Fujishima",

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doi = "10.1109/IMFEDK.2014.6867082",

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AU - Adachi, Hiroshi

AU - Motoyoshi, Mizuki

AU - Takano, Kyoya

AU - Katayama, Kosuke

AU - Amakawa, Shuhei

AU - Yoshida, Takeshi

AU - Fujishima, Minoru

PY - 2014/7/28

Y1 - 2014/7/28

N2 - This paper concerns maximizing the conversion gain of a CMOS push-push doubler, in which the drains of a pair of differentially driven MOSFETs are tied together. We propose to insert transmission lines, which act as resonators at the fundamental frequency, between the drains of the MOSFETs. In the simulation of the proposed circuit, it achieved an output power improvement of 2.2 dB at the 0 dBm input power.

AB - This paper concerns maximizing the conversion gain of a CMOS push-push doubler, in which the drains of a pair of differentially driven MOSFETs are tied together. We propose to insert transmission lines, which act as resonators at the fundamental frequency, between the drains of the MOSFETs. In the simulation of the proposed circuit, it achieved an output power improvement of 2.2 dB at the 0 dBm input power.

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KW - frequency multiplier

KW - millimeter-wave

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BT - IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 12th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2014

Y2 - 19 June 2014 through 20 June 2014

ER -

Design of CMOS resonating push-push frequency doubler

Abstract

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Keywords

ASJC Scopus subject areas

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