Design of high brightness light source based on laser-compton undulator for EUV lithography mask inspection

K. Sakaue, M. Washio, A. Endo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We will present a design of high brightness light source for EUV lithography mask inspection. The required system parameters are minimum brightness of 2500W/mm2/Sr at 13.5nm/2% bandwidth. Our design consists of superconducting DC RF-gun as a radiator and 10.74nm CO2 laser stacked in an optical cavity as a laser undulator. Recent achievements of each component technologies, which is 1.3GHz SC-RF-gun, 10kW average power short pulse CO2 laser, and laser storage optical super-cavity, indicate the feasibility of producing required brightness based on laser Compton undulator. Design parameters of high brightness EUV source, the technological gap of the present component technologies and required further developments will be resented at the conference.

Original languageEnglish
Title of host publicationIPAC 2010 - 1st International Particle Accelerator Conference
Pages148-150
Number of pages3
Publication statusPublished - 2010 Dec 1
Event1st International Particle Accelerator Conference, IPAC 2010 - Kyoto, Japan
Duration: 2010 May 232010 May 28

Publication series

NameIPAC 2010 - 1st International Particle Accelerator Conference

Conference

Conference1st International Particle Accelerator Conference, IPAC 2010
CountryJapan
CityKyoto
Period10/5/2310/5/28

ASJC Scopus subject areas

  • Nuclear and High Energy Physics

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    Sakaue, K., Washio, M., & Endo, A. (2010). Design of high brightness light source based on laser-compton undulator for EUV lithography mask inspection. In IPAC 2010 - 1st International Particle Accelerator Conference (pp. 148-150). (IPAC 2010 - 1st International Particle Accelerator Conference).