Abstract
A CMOS transmission line-to-waveguide transitions with a patch antenna for a WR3 waveguide (220-325 GHz) was designed using an electromagnetic-field simulator. The position of inserting the antenna to the waveguide and the size of the antenna were optimized to realize a low insertion loss and a wide bandwidth. As a result, an insertion loss of 0.9 dB and a 3-dB bandwidth of 120GHz were achieved.
| Original language | English |
|---|---|
| Title of host publication | IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781479936144 |
| DOIs | |
| Publication status | Published - 2014 Jul 28 |
| Externally published | Yes |
| Event | 12th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2014 - Kyoto, Japan Duration: 2014 Jun 19 → 2014 Jun 20 |
Other
| Other | 12th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2014 |
|---|---|
| Country | Japan |
| City | Kyoto |
| Period | 14/6/19 → 14/6/20 |
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Keywords
- microstrip line
- patch antenna
- transmission line-to-waveguide transition
- WR3
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Design of millimeter-wave CMOS transmission-line-to-waveguide transitions. / Kunitake, Hitoshi; Takano, Kyoya; Motoyoshi, Mizuki; Katayama, Kosuke; Amakawa, Shuhei; Yoshida, Takeshi; Fujishima, Minoru.
IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai. Institute of Electrical and Electronics Engineers Inc., 2014. 6867081.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Design of millimeter-wave CMOS transmission-line-to-waveguide transitions
AU - Kunitake, Hitoshi
AU - Takano, Kyoya
AU - Motoyoshi, Mizuki
AU - Katayama, Kosuke
AU - Amakawa, Shuhei
AU - Yoshida, Takeshi
AU - Fujishima, Minoru
PY - 2014/7/28
Y1 - 2014/7/28
N2 - A CMOS transmission line-to-waveguide transitions with a patch antenna for a WR3 waveguide (220-325 GHz) was designed using an electromagnetic-field simulator. The position of inserting the antenna to the waveguide and the size of the antenna were optimized to realize a low insertion loss and a wide bandwidth. As a result, an insertion loss of 0.9 dB and a 3-dB bandwidth of 120GHz were achieved.
AB - A CMOS transmission line-to-waveguide transitions with a patch antenna for a WR3 waveguide (220-325 GHz) was designed using an electromagnetic-field simulator. The position of inserting the antenna to the waveguide and the size of the antenna were optimized to realize a low insertion loss and a wide bandwidth. As a result, an insertion loss of 0.9 dB and a 3-dB bandwidth of 120GHz were achieved.
KW - microstrip line
KW - patch antenna
KW - transmission line-to-waveguide transition
KW - WR3
UR - http://www.scopus.com/inward/record.url?scp=84934300549&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84934300549&partnerID=8YFLogxK
U2 - 10.1109/IMFEDK.2014.6867081
DO - 10.1109/IMFEDK.2014.6867081
M3 - Conference contribution
AN - SCOPUS:84934300549
BT - IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai
PB - Institute of Electrical and Electronics Engineers Inc.
ER -