Abstract
A CMOS transmission line-to-waveguide transitions with a patch antenna for a WR3 waveguide (220-325 GHz) was designed using an electromagnetic-field simulator. The position of inserting the antenna to the waveguide and the size of the antenna were optimized to realize a low insertion loss and a wide bandwidth. As a result, an insertion loss of 0.9 dB and a 3-dB bandwidth of 120GHz were achieved.
| Original language | English |
|---|---|
| Title of host publication | IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781479936144 |
| DOIs | |
| Publication status | Published - 2014 Jul 28 |
| Externally published | Yes |
| Event | 12th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2014 - Kyoto, Japan Duration: 2014 Jun 19 → 2014 Jun 20 |
Other
| Other | 12th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2014 |
|---|---|
| Country | Japan |
| City | Kyoto |
| Period | 14/6/19 → 14/6/20 |
Keywords
- microstrip line
- patch antenna
- transmission line-to-waveguide transition
- WR3
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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Cite this
Kunitake, H., Takano, K., Motoyoshi, M., Katayama, K., Amakawa, S., Yoshida, T., & Fujishima, M. (2014). Design of millimeter-wave CMOS transmission-line-to-waveguide transitions. In IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai [6867081] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMFEDK.2014.6867081