Design of millimeter-wave CMOS transmission-line-to-waveguide transitions

Hitoshi Kunitake, Kyoya Takano, Mizuki Motoyoshi, Kosuke Katayama, Shuhei Amakawa, Takeshi Yoshida, Minoru Fujishima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A CMOS transmission line-to-waveguide transitions with a patch antenna for a WR3 waveguide (220-325 GHz) was designed using an electromagnetic-field simulator. The position of inserting the antenna to the waveguide and the size of the antenna were optimized to realize a low insertion loss and a wide bandwidth. As a result, an insertion loss of 0.9 dB and a 3-dB bandwidth of 120GHz were achieved.

Original languageEnglish
Title of host publicationIMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479936144
DOIs
Publication statusPublished - 2014 Jul 28
Externally publishedYes
Event12th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2014 - Kyoto, Japan
Duration: 2014 Jun 192014 Jun 20

Other

Other12th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2014
CountryJapan
CityKyoto
Period14/6/1914/6/20

Fingerprint

Millimeter waves
Electric lines
Waveguides
Insertion losses
Antennas
Bandwidth
Microstrip antennas
Electromagnetic fields
Simulators

Keywords

  • microstrip line
  • patch antenna
  • transmission line-to-waveguide transition
  • WR3

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Kunitake, H., Takano, K., Motoyoshi, M., Katayama, K., Amakawa, S., Yoshida, T., & Fujishima, M. (2014). Design of millimeter-wave CMOS transmission-line-to-waveguide transitions. In IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai [6867081] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMFEDK.2014.6867081

Design of millimeter-wave CMOS transmission-line-to-waveguide transitions. / Kunitake, Hitoshi; Takano, Kyoya; Motoyoshi, Mizuki; Katayama, Kosuke; Amakawa, Shuhei; Yoshida, Takeshi; Fujishima, Minoru.

IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai. Institute of Electrical and Electronics Engineers Inc., 2014. 6867081.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kunitake, H, Takano, K, Motoyoshi, M, Katayama, K, Amakawa, S, Yoshida, T & Fujishima, M 2014, Design of millimeter-wave CMOS transmission-line-to-waveguide transitions. in IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai., 6867081, Institute of Electrical and Electronics Engineers Inc., 12th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2014, Kyoto, Japan, 14/6/19. https://doi.org/10.1109/IMFEDK.2014.6867081
Kunitake H, Takano K, Motoyoshi M, Katayama K, Amakawa S, Yoshida T et al. Design of millimeter-wave CMOS transmission-line-to-waveguide transitions. In IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai. Institute of Electrical and Electronics Engineers Inc. 2014. 6867081 https://doi.org/10.1109/IMFEDK.2014.6867081
Kunitake, Hitoshi ; Takano, Kyoya ; Motoyoshi, Mizuki ; Katayama, Kosuke ; Amakawa, Shuhei ; Yoshida, Takeshi ; Fujishima, Minoru. / Design of millimeter-wave CMOS transmission-line-to-waveguide transitions. IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai. Institute of Electrical and Electronics Engineers Inc., 2014.
@inproceedings{5b342b1f9e3d4173832aae21735f7f58,
title = "Design of millimeter-wave CMOS transmission-line-to-waveguide transitions",
abstract = "A CMOS transmission line-to-waveguide transitions with a patch antenna for a WR3 waveguide (220-325 GHz) was designed using an electromagnetic-field simulator. The position of inserting the antenna to the waveguide and the size of the antenna were optimized to realize a low insertion loss and a wide bandwidth. As a result, an insertion loss of 0.9 dB and a 3-dB bandwidth of 120GHz were achieved.",
keywords = "microstrip line, patch antenna, transmission line-to-waveguide transition, WR3",
author = "Hitoshi Kunitake and Kyoya Takano and Mizuki Motoyoshi and Kosuke Katayama and Shuhei Amakawa and Takeshi Yoshida and Minoru Fujishima",
year = "2014",
month = "7",
day = "28",
doi = "10.1109/IMFEDK.2014.6867081",
language = "English",
booktitle = "IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

TY - GEN

T1 - Design of millimeter-wave CMOS transmission-line-to-waveguide transitions

AU - Kunitake, Hitoshi

AU - Takano, Kyoya

AU - Motoyoshi, Mizuki

AU - Katayama, Kosuke

AU - Amakawa, Shuhei

AU - Yoshida, Takeshi

AU - Fujishima, Minoru

PY - 2014/7/28

Y1 - 2014/7/28

N2 - A CMOS transmission line-to-waveguide transitions with a patch antenna for a WR3 waveguide (220-325 GHz) was designed using an electromagnetic-field simulator. The position of inserting the antenna to the waveguide and the size of the antenna were optimized to realize a low insertion loss and a wide bandwidth. As a result, an insertion loss of 0.9 dB and a 3-dB bandwidth of 120GHz were achieved.

AB - A CMOS transmission line-to-waveguide transitions with a patch antenna for a WR3 waveguide (220-325 GHz) was designed using an electromagnetic-field simulator. The position of inserting the antenna to the waveguide and the size of the antenna were optimized to realize a low insertion loss and a wide bandwidth. As a result, an insertion loss of 0.9 dB and a 3-dB bandwidth of 120GHz were achieved.

KW - microstrip line

KW - patch antenna

KW - transmission line-to-waveguide transition

KW - WR3

UR - http://www.scopus.com/inward/record.url?scp=84934300549&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84934300549&partnerID=8YFLogxK

U2 - 10.1109/IMFEDK.2014.6867081

DO - 10.1109/IMFEDK.2014.6867081

M3 - Conference contribution

BT - IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai

PB - Institute of Electrical and Electronics Engineers Inc.

ER -