TY - JOUR
T1 - Design of new UV/blue/green light emitters made of hexagonal-phase ZnMgCdOSSe mixed-crystal system fabricated on GaAs- and InP-(111) substrates
AU - Jia, A.
AU - Furushima, T.
AU - Kobayashi, M.
AU - Kato, Y.
AU - Shimotomai, M.
AU - Yoshikawa, A.
AU - Takahashi, K.
N1 - Funding Information:
This work was partly supported by the “Research for the Future” Program, Japan Society for the Promotion of Science (JSPS-RFTF 96R16201).
PY - 2000
Y1 - 2000
N2 - A new candidate for long lifetime short-wavelength light emitters made of hexagonal II-VI compounds has been proposed. In this paper, the results of theoretical design of ZnMgCdOSSe-based light emitters fabricated on (111) plane of GaAs and InP substrates is presented. The band lineups of CdZnS/ZnSSe and CdZnS/ZnMgS structures were estimated with Harrison's LCAO theory. Further, as for the first step of an experimental investigation on the growth of high phase-quality hexagonal II-VI compounds, growth of CdZnS epilayers were examined on GaAs(111) substrate. The epilayers were characterized by high-resolution X-ray diffraction reciprocal space and pole figure measurements. In this study, the optimum growth temperature was 300°C for hexagonal phase CdZnS, and the inclusion of cubic phase CdZnS drastically decreased with increasing Cd content at 300°C.
AB - A new candidate for long lifetime short-wavelength light emitters made of hexagonal II-VI compounds has been proposed. In this paper, the results of theoretical design of ZnMgCdOSSe-based light emitters fabricated on (111) plane of GaAs and InP substrates is presented. The band lineups of CdZnS/ZnSSe and CdZnS/ZnMgS structures were estimated with Harrison's LCAO theory. Further, as for the first step of an experimental investigation on the growth of high phase-quality hexagonal II-VI compounds, growth of CdZnS epilayers were examined on GaAs(111) substrate. The epilayers were characterized by high-resolution X-ray diffraction reciprocal space and pole figure measurements. In this study, the optimum growth temperature was 300°C for hexagonal phase CdZnS, and the inclusion of cubic phase CdZnS drastically decreased with increasing Cd content at 300°C.
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U2 - 10.1016/S0022-0248(00)00279-7
DO - 10.1016/S0022-0248(00)00279-7
M3 - Article
AN - SCOPUS:0033688224
SN - 0022-0248
VL - 214
SP - 1085
EP - 1090
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
M1 - 625
ER -