Design of new UV/blue/green light emitters made of hexagonal-phase ZnMgCdOSSe mixed-crystal system fabricated on GaAs- and InP-(111) substrates

A. Jia, T. Furushima, M. Kobayashi, Y. Kato, M. Shimotomai, A. Yoshikawa, K. Takahashi

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

A new candidate for long lifetime short-wavelength light emitters made of hexagonal II-VI compounds has been proposed. In this paper, the results of theoretical design of ZnMgCdOSSe-based light emitters fabricated on (111) plane of GaAs and InP substrates is presented. The band lineups of CdZnS/ZnSSe and CdZnS/ZnMgS structures were estimated with Harrison's LCAO theory. Further, as for the first step of an experimental investigation on the growth of high phase-quality hexagonal II-VI compounds, growth of CdZnS epilayers were examined on GaAs(111) substrate. The epilayers were characterized by high-resolution X-ray diffraction reciprocal space and pole figure measurements. In this study, the optimum growth temperature was 300°C for hexagonal phase CdZnS, and the inclusion of cubic phase CdZnS drastically decreased with increasing Cd content at 300°C.

Original languageEnglish
Article number625
Pages (from-to)1085-1090
Number of pages6
JournalJournal of Crystal Growth
Volume214
DOIs
Publication statusPublished - 2000 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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