Detecting spatially localized excitons in InGaN quantum well structures with a micro-photoluminescence technique

H. Gotoh, T. Akasaka, T. Tawara, Y. Kobayashi, T. Makimoto, H. Nakano

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Spatially localized excitons are observed in InGaN quantum well structures at 4 K by using a micro-photoluminescence (PL) technique. By combining PL and nano-lithographic techniques, we are able to detect PL signals with a 0.2 μm spatial resolution. A sharp PL line (linewidth of <0.4 meV) is clearly obtained, which originates from a single localized exciton induced by a quantum dot like a local potential minimum position. Sharp PL spectra detected in three QWs with different indium compositions confirm that there are exciton localization effects in quantum wells in the blue-green (about 2.60 eV, 477 nm) to purple (about 3.05 eV, 406 nm) regions.

Original languageEnglish
Pages (from-to)590-593
Number of pages4
JournalSolid State Communications
Volume138
Issue number12
DOIs
Publication statusPublished - 2006 Jun 1

    Fingerprint

Keywords

  • A. Nitride semiconductors
  • D. Localized excitons
  • D. Optical properties
  • D. Sharp photoluminescence

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this