Detecting spatially localized excitons in InGaN quantum well structures with a micro-photoluminescence technique

H. Gotoh, T. Akasaka, T. Tawara, Y. Kobayashi, Toshiki Makimoto, H. Nakano

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Spatially localized excitons are observed in InGaN quantum well structures at 4 K by using a micro-photoluminescence (PL) technique. By combining PL and nano-lithographic techniques, we are able to detect PL signals with a 0.2 μm spatial resolution. A sharp PL line (linewidth of <0.4 meV) is clearly obtained, which originates from a single localized exciton induced by a quantum dot like a local potential minimum position. Sharp PL spectra detected in three QWs with different indium compositions confirm that there are exciton localization effects in quantum wells in the blue-green (about 2.60 eV, 477 nm) to purple (about 3.05 eV, 406 nm) regions.

Original languageEnglish
Pages (from-to)590-593
Number of pages4
JournalSolid State Communications
Volume138
Issue number12
DOIs
Publication statusPublished - 2006 Jun
Externally publishedYes

Fingerprint

Excitons
Semiconductor quantum wells
Photoluminescence
excitons
quantum wells
photoluminescence
Indium
Linewidth
Semiconductor quantum dots
indium
spatial resolution
quantum dots
LDS 751
Chemical analysis

Keywords

  • A. Nitride semiconductors
  • D. Localized excitons
  • D. Optical properties
  • D. Sharp photoluminescence

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Detecting spatially localized excitons in InGaN quantum well structures with a micro-photoluminescence technique. / Gotoh, H.; Akasaka, T.; Tawara, T.; Kobayashi, Y.; Makimoto, Toshiki; Nakano, H.

In: Solid State Communications, Vol. 138, No. 12, 06.2006, p. 590-593.

Research output: Contribution to journalArticle

Gotoh, H. ; Akasaka, T. ; Tawara, T. ; Kobayashi, Y. ; Makimoto, Toshiki ; Nakano, H. / Detecting spatially localized excitons in InGaN quantum well structures with a micro-photoluminescence technique. In: Solid State Communications. 2006 ; Vol. 138, No. 12. pp. 590-593.
@article{e3176d864c684c9c91c2675cd3d00874,
title = "Detecting spatially localized excitons in InGaN quantum well structures with a micro-photoluminescence technique",
abstract = "Spatially localized excitons are observed in InGaN quantum well structures at 4 K by using a micro-photoluminescence (PL) technique. By combining PL and nano-lithographic techniques, we are able to detect PL signals with a 0.2 μm spatial resolution. A sharp PL line (linewidth of <0.4 meV) is clearly obtained, which originates from a single localized exciton induced by a quantum dot like a local potential minimum position. Sharp PL spectra detected in three QWs with different indium compositions confirm that there are exciton localization effects in quantum wells in the blue-green (about 2.60 eV, 477 nm) to purple (about 3.05 eV, 406 nm) regions.",
keywords = "A. Nitride semiconductors, D. Localized excitons, D. Optical properties, D. Sharp photoluminescence",
author = "H. Gotoh and T. Akasaka and T. Tawara and Y. Kobayashi and Toshiki Makimoto and H. Nakano",
year = "2006",
month = "6",
doi = "10.1016/j.ssc.2006.04.006",
language = "English",
volume = "138",
pages = "590--593",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Limited",
number = "12",

}

TY - JOUR

T1 - Detecting spatially localized excitons in InGaN quantum well structures with a micro-photoluminescence technique

AU - Gotoh, H.

AU - Akasaka, T.

AU - Tawara, T.

AU - Kobayashi, Y.

AU - Makimoto, Toshiki

AU - Nakano, H.

PY - 2006/6

Y1 - 2006/6

N2 - Spatially localized excitons are observed in InGaN quantum well structures at 4 K by using a micro-photoluminescence (PL) technique. By combining PL and nano-lithographic techniques, we are able to detect PL signals with a 0.2 μm spatial resolution. A sharp PL line (linewidth of <0.4 meV) is clearly obtained, which originates from a single localized exciton induced by a quantum dot like a local potential minimum position. Sharp PL spectra detected in three QWs with different indium compositions confirm that there are exciton localization effects in quantum wells in the blue-green (about 2.60 eV, 477 nm) to purple (about 3.05 eV, 406 nm) regions.

AB - Spatially localized excitons are observed in InGaN quantum well structures at 4 K by using a micro-photoluminescence (PL) technique. By combining PL and nano-lithographic techniques, we are able to detect PL signals with a 0.2 μm spatial resolution. A sharp PL line (linewidth of <0.4 meV) is clearly obtained, which originates from a single localized exciton induced by a quantum dot like a local potential minimum position. Sharp PL spectra detected in three QWs with different indium compositions confirm that there are exciton localization effects in quantum wells in the blue-green (about 2.60 eV, 477 nm) to purple (about 3.05 eV, 406 nm) regions.

KW - A. Nitride semiconductors

KW - D. Localized excitons

KW - D. Optical properties

KW - D. Sharp photoluminescence

UR - http://www.scopus.com/inward/record.url?scp=33745235770&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33745235770&partnerID=8YFLogxK

U2 - 10.1016/j.ssc.2006.04.006

DO - 10.1016/j.ssc.2006.04.006

M3 - Article

AN - SCOPUS:33745235770

VL - 138

SP - 590

EP - 593

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 12

ER -