Detection of optical trapping of CdTe quantum dots by two-photon-induced luminescence

Lingyun Pan, Atsushi Ishikawa, Naoto Tamai

Research output: Contribution to journalArticle

55 Citations (Scopus)

Abstract

Nanometer-sized CdTe quantum dots (QDs) in D2 O can be optically trapped by a high repetition-rate picosecond Nd:YLF laser with an input power as low as 100 mW. A large two-photon absorption (TPA) cross section of 104 - 105 GM for CdTe QDs makes it possible to detect the trapping process with TPA induced luminescence. In D2 O, the luminescence intensity of CdTe QDs was found to increase with time, whereas an intensity decrease was clearly detected in H2 O. In addition, the optically trapped CdTe QDs were fixed on a hydrophilic glass substrate. Laser trapping of QDs may provide a basic technique for quantum information and biological applications.

Original languageEnglish
Article number161305
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume75
Issue number16
DOIs
Publication statusPublished - 2007 Apr 30
Externally publishedYes

Fingerprint

Semiconductor quantum dots
Luminescence
Photons
trapping
quantum dots
luminescence
photons
YLF lasers
absorption cross sections
repetition
Glass
Lasers
glass
Substrates
lasers

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Detection of optical trapping of CdTe quantum dots by two-photon-induced luminescence. / Pan, Lingyun; Ishikawa, Atsushi; Tamai, Naoto.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 75, No. 16, 161305, 30.04.2007.

Research output: Contribution to journalArticle

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