Deterioration in the piezoelectric property of ScAlN thin films by negative ion bombardment increased in low-pressure sputtering deposition

Takumi Tominaga, Shinji Takayanagi, Takahiko Yanagitani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

ScAlN films are known to have piezoelectric properties much larger than AlN films and can be deposited using a RF magnetron sputtering method. In general, sputtering deposition at low gas pressure improves the film quality, because increasing mean free path of sputtered particles results in reducing their thermalization and scattering. However, negative ion bombardment to the substrate increase at low pressure. We have previously shown that carbon and oxygen impurities in the Sc ingots cause negative ion bombardment, which degrades the piezoelectric properties of ScAlN films. In this study, we have demonstrated that the piezoelectric properties of ScAlN films are deteriorated by the negative ion bombardment increased in low-pressure sputtering deposition.

Original languageEnglish
Title of host publicationIUS 2020 - International Ultrasonics Symposium, Proceedings
PublisherIEEE Computer Society
ISBN (Electronic)9781728154480
DOIs
Publication statusPublished - 2020 Sep 7
Event2020 IEEE International Ultrasonics Symposium, IUS 2020 - Las Vegas, United States
Duration: 2020 Sep 72020 Sep 11

Publication series

NameIEEE International Ultrasonics Symposium, IUS
Volume2020-September
ISSN (Print)1948-5719
ISSN (Electronic)1948-5727

Conference

Conference2020 IEEE International Ultrasonics Symposium, IUS 2020
CountryUnited States
CityLas Vegas
Period20/9/720/9/11

Keywords

  • AlN
  • Electromechanical coupling coefficient kt
  • Negative ion
  • Piezoelectric property
  • Piezoelectric thin film
  • ScAlN
  • Sputtering deposition

ASJC Scopus subject areas

  • Acoustics and Ultrasonics

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