Deterioration in the piezoelectric property of ScAlN thin films by negative ion bombardment increased in low-pressure sputtering deposition

Takumi Tominaga; Shinji Takayanagi; Takahiko Yanagitani

doi:10.1109/IUS46767.2020.9251438

Deterioration in the piezoelectric property of ScAlN thin films by negative ion bombardment increased in low-pressure sputtering deposition

Takumi Tominaga, Shinji Takayanagi, Takahiko Yanagitani

School of Advanced Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

ScAlN films are known to have piezoelectric properties much larger than AlN films and can be deposited using a RF magnetron sputtering method. In general, sputtering deposition at low gas pressure improves the film quality, because increasing mean free path of sputtered particles results in reducing their thermalization and scattering. However, negative ion bombardment to the substrate increase at low pressure. We have previously shown that carbon and oxygen impurities in the Sc ingots cause negative ion bombardment, which degrades the piezoelectric properties of ScAlN films. In this study, we have demonstrated that the piezoelectric properties of ScAlN films are deteriorated by the negative ion bombardment increased in low-pressure sputtering deposition.

Original language	English
Title of host publication	IUS 2020 - International Ultrasonics Symposium, Proceedings
Publisher	IEEE Computer Society
ISBN (Electronic)	9781728154480
DOIs	https://doi.org/10.1109/IUS46767.2020.9251438
Publication status	Published - 2020 Sep 7
Event	2020 IEEE International Ultrasonics Symposium, IUS 2020 - Las Vegas, United States Duration: 2020 Sep 7 → 2020 Sep 11

Publication series

Name	IEEE International Ultrasonics Symposium, IUS
Volume	2020-September
ISSN (Print)	1948-5719
ISSN (Electronic)	1948-5727

Conference

Conference	2020 IEEE International Ultrasonics Symposium, IUS 2020
Country/Territory	United States
City	Las Vegas
Period	20/9/7 → 20/9/11

Keywords

AlN
Electromechanical coupling coefficient kt
Negative ion
Piezoelectric property
Piezoelectric thin film
ScAlN
Sputtering deposition

ASJC Scopus subject areas

Acoustics and Ultrasonics

Access to Document

10.1109/IUS46767.2020.9251438

Cite this

Tominaga, T., Takayanagi, S., & Yanagitani, T. (2020). Deterioration in the piezoelectric property of ScAlN thin films by negative ion bombardment increased in low-pressure sputtering deposition. In IUS 2020 - International Ultrasonics Symposium, Proceedings [9251438] (IEEE International Ultrasonics Symposium, IUS; Vol. 2020-September). IEEE Computer Society. https://doi.org/10.1109/IUS46767.2020.9251438

Deterioration in the piezoelectric property of ScAlN thin films by negative ion bombardment increased in low-pressure sputtering deposition. / Tominaga, Takumi; Takayanagi, Shinji; Yanagitani, Takahiko.

IUS 2020 - International Ultrasonics Symposium, Proceedings. IEEE Computer Society, 2020. 9251438 (IEEE International Ultrasonics Symposium, IUS; Vol. 2020-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tominaga, T, Takayanagi, S & Yanagitani, T 2020, Deterioration in the piezoelectric property of ScAlN thin films by negative ion bombardment increased in low-pressure sputtering deposition. in IUS 2020 - International Ultrasonics Symposium, Proceedings., 9251438, IEEE International Ultrasonics Symposium, IUS, vol. 2020-September, IEEE Computer Society, 2020 IEEE International Ultrasonics Symposium, IUS 2020, Las Vegas, United States, 20/9/7. https://doi.org/10.1109/IUS46767.2020.9251438

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abstract = "ScAlN films are known to have piezoelectric properties much larger than AlN films and can be deposited using a RF magnetron sputtering method. In general, sputtering deposition at low gas pressure improves the film quality, because increasing mean free path of sputtered particles results in reducing their thermalization and scattering. However, negative ion bombardment to the substrate increase at low pressure. We have previously shown that carbon and oxygen impurities in the Sc ingots cause negative ion bombardment, which degrades the piezoelectric properties of ScAlN films. In this study, we have demonstrated that the piezoelectric properties of ScAlN films are deteriorated by the negative ion bombardment increased in low-pressure sputtering deposition.",

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N2 - ScAlN films are known to have piezoelectric properties much larger than AlN films and can be deposited using a RF magnetron sputtering method. In general, sputtering deposition at low gas pressure improves the film quality, because increasing mean free path of sputtered particles results in reducing their thermalization and scattering. However, negative ion bombardment to the substrate increase at low pressure. We have previously shown that carbon and oxygen impurities in the Sc ingots cause negative ion bombardment, which degrades the piezoelectric properties of ScAlN films. In this study, we have demonstrated that the piezoelectric properties of ScAlN films are deteriorated by the negative ion bombardment increased in low-pressure sputtering deposition.

AB - ScAlN films are known to have piezoelectric properties much larger than AlN films and can be deposited using a RF magnetron sputtering method. In general, sputtering deposition at low gas pressure improves the film quality, because increasing mean free path of sputtered particles results in reducing their thermalization and scattering. However, negative ion bombardment to the substrate increase at low pressure. We have previously shown that carbon and oxygen impurities in the Sc ingots cause negative ion bombardment, which degrades the piezoelectric properties of ScAlN films. In this study, we have demonstrated that the piezoelectric properties of ScAlN films are deteriorated by the negative ion bombardment increased in low-pressure sputtering deposition.

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Deterioration in the piezoelectric property of ScAlN thin films by negative ion bombardment increased in low-pressure sputtering deposition

Abstract

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Keywords

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