TY - GEN
T1 - Deterioration in the piezoelectric property of ScAlN thin films by negative ion bombardment increased in low-pressure sputtering deposition
AU - Tominaga, Takumi
AU - Takayanagi, Shinji
AU - Yanagitani, Takahiko
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/9/7
Y1 - 2020/9/7
N2 - ScAlN films are known to have piezoelectric properties much larger than AlN films and can be deposited using a RF magnetron sputtering method. In general, sputtering deposition at low gas pressure improves the film quality, because increasing mean free path of sputtered particles results in reducing their thermalization and scattering. However, negative ion bombardment to the substrate increase at low pressure. We have previously shown that carbon and oxygen impurities in the Sc ingots cause negative ion bombardment, which degrades the piezoelectric properties of ScAlN films. In this study, we have demonstrated that the piezoelectric properties of ScAlN films are deteriorated by the negative ion bombardment increased in low-pressure sputtering deposition.
AB - ScAlN films are known to have piezoelectric properties much larger than AlN films and can be deposited using a RF magnetron sputtering method. In general, sputtering deposition at low gas pressure improves the film quality, because increasing mean free path of sputtered particles results in reducing their thermalization and scattering. However, negative ion bombardment to the substrate increase at low pressure. We have previously shown that carbon and oxygen impurities in the Sc ingots cause negative ion bombardment, which degrades the piezoelectric properties of ScAlN films. In this study, we have demonstrated that the piezoelectric properties of ScAlN films are deteriorated by the negative ion bombardment increased in low-pressure sputtering deposition.
KW - AlN
KW - Electromechanical coupling coefficient kt
KW - Negative ion
KW - Piezoelectric property
KW - Piezoelectric thin film
KW - ScAlN
KW - Sputtering deposition
UR - http://www.scopus.com/inward/record.url?scp=85097877837&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85097877837&partnerID=8YFLogxK
U2 - 10.1109/IUS46767.2020.9251438
DO - 10.1109/IUS46767.2020.9251438
M3 - Conference contribution
AN - SCOPUS:85097877837
T3 - IEEE International Ultrasonics Symposium, IUS
BT - IUS 2020 - International Ultrasonics Symposium, Proceedings
PB - IEEE Computer Society
T2 - 2020 IEEE International Ultrasonics Symposium, IUS 2020
Y2 - 7 September 2020 through 11 September 2020
ER -