Deterministic doping to silicon and diamond materials for quantum processing

Takahiro Shinada, Enrico Prati, Takashi Tanii, Tokuyuki Teraji, Shinobu Onoda, Fedor Jelezko, Junnichi Isoya

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    Nanoscale electronic devices will require the placement of dopants in a predetermined location, namely, a single atom control to explore novel functions for future nanoelectronics. Deterministic doping method, i.e. single-ion implantation, realizes ordered arrays of single-atoms in silicon, diamond and other materials, which might provide opportunities to single-dopant transport or single-photon source beneficial to quantum processing.

    Original languageEnglish
    Title of host publication16th International Conference on Nanotechnology - IEEE NANO 2016
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages888-890
    Number of pages3
    ISBN (Electronic)9781509039142
    DOIs
    Publication statusPublished - 2016 Nov 21
    Event16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan
    Duration: 2016 Aug 222016 Aug 25

    Other

    Other16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
    CountryJapan
    CitySendai
    Period16/8/2216/8/25

    Fingerprint

    Diamond
    Silicon
    Diamonds
    diamonds
    Doping (additives)
    silicon
    Processing
    atoms
    ion implantation
    Atoms
    Nanoelectronics
    Ion implantation
    photons
    Photons
    electronics

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics

    Cite this

    Shinada, T., Prati, E., Tanii, T., Teraji, T., Onoda, S., Jelezko, F., & Isoya, J. (2016). Deterministic doping to silicon and diamond materials for quantum processing. In 16th International Conference on Nanotechnology - IEEE NANO 2016 (pp. 888-890). [7751573] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2016.7751573

    Deterministic doping to silicon and diamond materials for quantum processing. / Shinada, Takahiro; Prati, Enrico; Tanii, Takashi; Teraji, Tokuyuki; Onoda, Shinobu; Jelezko, Fedor; Isoya, Junnichi.

    16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 888-890 7751573.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Shinada, T, Prati, E, Tanii, T, Teraji, T, Onoda, S, Jelezko, F & Isoya, J 2016, Deterministic doping to silicon and diamond materials for quantum processing. in 16th International Conference on Nanotechnology - IEEE NANO 2016., 7751573, Institute of Electrical and Electronics Engineers Inc., pp. 888-890, 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016, Sendai, Japan, 16/8/22. https://doi.org/10.1109/NANO.2016.7751573
    Shinada T, Prati E, Tanii T, Teraji T, Onoda S, Jelezko F et al. Deterministic doping to silicon and diamond materials for quantum processing. In 16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 888-890. 7751573 https://doi.org/10.1109/NANO.2016.7751573
    Shinada, Takahiro ; Prati, Enrico ; Tanii, Takashi ; Teraji, Tokuyuki ; Onoda, Shinobu ; Jelezko, Fedor ; Isoya, Junnichi. / Deterministic doping to silicon and diamond materials for quantum processing. 16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 888-890
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