Abstract
A control of the light-wave properties is critical issue in developing attractive photonic devices. In conventional photonic devices such as semiconductor waveguide light sources, complicated techniques were required to fabricate the high-aspect-ratio artificial periodic structures that help controlling the light-wave properties. This is because the conventional photonic devices are constructed with thick cladding layers for an optical confinement. In this paper, we propose and fabricate a half-cladding semiconductor light source as an attractive photonic device structure. We successfully demonstrated a light emission from the light source under current injection at room temperature. With a half-cladding structure, the total thickness between the device surface and the top of the active layer is on the sub-μm scale. Controlling the light-wave properties should therefore be possible with artificial surface microstructures fabricated by a low aspect ratio process sequence.
| Original language | English |
|---|---|
| Article number | 04DG04 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 50 |
| Issue number | 4 PART 2 |
| DOIs | |
| Publication status | Published - 2011 Apr |
| Externally published | Yes |
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ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Developing a half-cladding semiconductor photonic device structure for surface transmission of light waves. / Yamamoto, Naokatsu; Fujioka, Hiroki; Murakami, Daisuke; Akahane, Kouichi; Kawanishi, Tetsuya; Sotobayashi, Hideyuki; Takai, Hiroshi.
In: Japanese Journal of Applied Physics, Vol. 50, No. 4 PART 2, 04DG04, 04.2011.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Developing a half-cladding semiconductor photonic device structure for surface transmission of light waves
AU - Yamamoto, Naokatsu
AU - Fujioka, Hiroki
AU - Murakami, Daisuke
AU - Akahane, Kouichi
AU - Kawanishi, Tetsuya
AU - Sotobayashi, Hideyuki
AU - Takai, Hiroshi
PY - 2011/4
Y1 - 2011/4
N2 - A control of the light-wave properties is critical issue in developing attractive photonic devices. In conventional photonic devices such as semiconductor waveguide light sources, complicated techniques were required to fabricate the high-aspect-ratio artificial periodic structures that help controlling the light-wave properties. This is because the conventional photonic devices are constructed with thick cladding layers for an optical confinement. In this paper, we propose and fabricate a half-cladding semiconductor light source as an attractive photonic device structure. We successfully demonstrated a light emission from the light source under current injection at room temperature. With a half-cladding structure, the total thickness between the device surface and the top of the active layer is on the sub-μm scale. Controlling the light-wave properties should therefore be possible with artificial surface microstructures fabricated by a low aspect ratio process sequence.
AB - A control of the light-wave properties is critical issue in developing attractive photonic devices. In conventional photonic devices such as semiconductor waveguide light sources, complicated techniques were required to fabricate the high-aspect-ratio artificial periodic structures that help controlling the light-wave properties. This is because the conventional photonic devices are constructed with thick cladding layers for an optical confinement. In this paper, we propose and fabricate a half-cladding semiconductor light source as an attractive photonic device structure. We successfully demonstrated a light emission from the light source under current injection at room temperature. With a half-cladding structure, the total thickness between the device surface and the top of the active layer is on the sub-μm scale. Controlling the light-wave properties should therefore be possible with artificial surface microstructures fabricated by a low aspect ratio process sequence.
UR - http://www.scopus.com/inward/record.url?scp=79955402123&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79955402123&partnerID=8YFLogxK
U2 - 10.1143/JJAP.50.04DG04
DO - 10.1143/JJAP.50.04DG04
M3 - Article
AN - SCOPUS:79955402123
VL - 50
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 PART 2
M1 - 04DG04
ER -