Development and evaluation of SiC inverter using Ni micro plating bonding power module

Akihiro Kawagoe, Tomoya Itose, Akihiro Imakiire, Masahiro Kozako, Masayuki Hikita, Kohei Tatsumi, Tomonori Iizuka, Isamu Morisako, Nobuaki Sato, Koji Shimizu, Kazutoshi Ueda, Kazuhiko Sugiura, Kazuhiro Tsuruta, Keiji Toda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper reports on evaluation of inverter system using silicon carbide (SiC) power module with a novel packaging technology of Ni micro plating bonding. The power module is developed to make the structure maximize the performance of SiC attracting attention in recent years. As a result, it was found that the developed inverter reduces the inverter loss and improves the efficiency of the entire inverter system as compared with in-vehicle product using Si-IGBT and the inverter consisting of the conventional package structure using SiC MOSFET. Moreover, it was confirmed that switching was possible even when the chip temperature exceeded 200°C, suggesting that the developed inverter can be driven under the high temperature environment.

Original languageEnglish
Title of host publication2019 IEEE International Workshop on Integrated Power Packaging, IWIPP 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages36-39
Number of pages4
ISBN (Electronic)9781538676097
DOIs
Publication statusPublished - 2019 Apr 1
Event3rd IEEE International Workshop on Integrated Power Packaging, IWIPP 2019 - Toulouse, France
Duration: 2019 Apr 242019 Apr 26

Publication series

Name2019 IEEE International Workshop on Integrated Power Packaging, IWIPP 2019

Conference

Conference3rd IEEE International Workshop on Integrated Power Packaging, IWIPP 2019
CountryFrance
CityToulouse
Period19/4/2419/4/26

Fingerprint

Plating
Silicon carbide
Insulated gate bipolar transistors (IGBT)
Packaging
Temperature
silicon carbide

Keywords

  • Efficiency
  • Inverter
  • Ni micro plating bonding
  • Silicon Carbide (SiC)

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Kawagoe, A., Itose, T., Imakiire, A., Kozako, M., Hikita, M., Tatsumi, K., ... Toda, K. (2019). Development and evaluation of SiC inverter using Ni micro plating bonding power module. In 2019 IEEE International Workshop on Integrated Power Packaging, IWIPP 2019 (pp. 36-39). [8799079] (2019 IEEE International Workshop on Integrated Power Packaging, IWIPP 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWIPP.2019.8799079

Development and evaluation of SiC inverter using Ni micro plating bonding power module. / Kawagoe, Akihiro; Itose, Tomoya; Imakiire, Akihiro; Kozako, Masahiro; Hikita, Masayuki; Tatsumi, Kohei; Iizuka, Tomonori; Morisako, Isamu; Sato, Nobuaki; Shimizu, Koji; Ueda, Kazutoshi; Sugiura, Kazuhiko; Tsuruta, Kazuhiro; Toda, Keiji.

2019 IEEE International Workshop on Integrated Power Packaging, IWIPP 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 36-39 8799079 (2019 IEEE International Workshop on Integrated Power Packaging, IWIPP 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kawagoe, A, Itose, T, Imakiire, A, Kozako, M, Hikita, M, Tatsumi, K, Iizuka, T, Morisako, I, Sato, N, Shimizu, K, Ueda, K, Sugiura, K, Tsuruta, K & Toda, K 2019, Development and evaluation of SiC inverter using Ni micro plating bonding power module. in 2019 IEEE International Workshop on Integrated Power Packaging, IWIPP 2019., 8799079, 2019 IEEE International Workshop on Integrated Power Packaging, IWIPP 2019, Institute of Electrical and Electronics Engineers Inc., pp. 36-39, 3rd IEEE International Workshop on Integrated Power Packaging, IWIPP 2019, Toulouse, France, 19/4/24. https://doi.org/10.1109/IWIPP.2019.8799079
Kawagoe A, Itose T, Imakiire A, Kozako M, Hikita M, Tatsumi K et al. Development and evaluation of SiC inverter using Ni micro plating bonding power module. In 2019 IEEE International Workshop on Integrated Power Packaging, IWIPP 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 36-39. 8799079. (2019 IEEE International Workshop on Integrated Power Packaging, IWIPP 2019). https://doi.org/10.1109/IWIPP.2019.8799079
Kawagoe, Akihiro ; Itose, Tomoya ; Imakiire, Akihiro ; Kozako, Masahiro ; Hikita, Masayuki ; Tatsumi, Kohei ; Iizuka, Tomonori ; Morisako, Isamu ; Sato, Nobuaki ; Shimizu, Koji ; Ueda, Kazutoshi ; Sugiura, Kazuhiko ; Tsuruta, Kazuhiro ; Toda, Keiji. / Development and evaluation of SiC inverter using Ni micro plating bonding power module. 2019 IEEE International Workshop on Integrated Power Packaging, IWIPP 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 36-39 (2019 IEEE International Workshop on Integrated Power Packaging, IWIPP 2019).
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