TY - JOUR
T1 - Development of a CdTe pixel detector with a window comparator ASIC for high energy X-ray applications
AU - Hirono, T.
AU - Toyokawa, H.
AU - Furukawa, Y.
AU - Honma, T.
AU - Ikeda, H.
AU - Kawase, M.
AU - Koganezawa, T.
AU - Ohata, T.
AU - Sato, M.
AU - Sato, G.
AU - Takagaki, M.
AU - Takahashi, T.
AU - Watanabe, S.
PY - 2011/9/11
Y1 - 2011/9/11
N2 - We have developed a photon-counting-type CdTe pixel detector (SP8-01). SP8-01 was designed as a prototype of a high-energy X-ray imaging detector for experiments using synchrotron radiation. SP8-01 has a CdTe sensor of 500μm thickness, which has an absorption efficiency of almost 100% up to 50 keV and 45% even at 100 keV. A full-custom application specific integrated circuit (ASIC) was designed as a readout circuit of SP8-01, which is equipped with a window-type discriminator. The upper discriminator realizes a low-background measurement, because X-ray beams from the monochromator contain higher-order components beside the fundamental X-rays in general. ASIC chips were fabricated with a TSMC 0.25μm CMOS process, and CdTe sensors were bump-bonded to the ASIC chips by a gold-stud bonding technique. Beam tests were performed at SPring-8. SP8-01 detected X-rays up to 120 keV. The capability of SP8-01 as an imaging detector for high-energy X-ray synchrotron radiation was evaluated with its performance characteristics.
AB - We have developed a photon-counting-type CdTe pixel detector (SP8-01). SP8-01 was designed as a prototype of a high-energy X-ray imaging detector for experiments using synchrotron radiation. SP8-01 has a CdTe sensor of 500μm thickness, which has an absorption efficiency of almost 100% up to 50 keV and 45% even at 100 keV. A full-custom application specific integrated circuit (ASIC) was designed as a readout circuit of SP8-01, which is equipped with a window-type discriminator. The upper discriminator realizes a low-background measurement, because X-ray beams from the monochromator contain higher-order components beside the fundamental X-rays in general. ASIC chips were fabricated with a TSMC 0.25μm CMOS process, and CdTe sensors were bump-bonded to the ASIC chips by a gold-stud bonding technique. Beam tests were performed at SPring-8. SP8-01 detected X-rays up to 120 keV. The capability of SP8-01 as an imaging detector for high-energy X-ray synchrotron radiation was evaluated with its performance characteristics.
KW - CdTe
KW - Photon counting
KW - Pixel detector
KW - Readout ASIC
KW - X-ray imaging
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U2 - 10.1016/j.nima.2010.12.207
DO - 10.1016/j.nima.2010.12.207
M3 - Article
AN - SCOPUS:80052262466
SN - 0168-9002
VL - 650
SP - 88
EP - 91
JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
IS - 1
ER -