Development of compact EUV source based on laser compton scattering

S. Kashiwagi, R. Kato, J. Yang, G. Isoyama, Kazuyuki Sakaue, A. Masuda, T. Nomoto, T. Gowa, Masakazu Washio, R. Kuroda, J. Urakawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution


High-power extreme ultra-violet (EUV) sources are required for next generation semiconductor lithography. We start developing a compact EUV source in the spectral range of 13-14 nm, which is based on laser Compton scattering between a 7 MeV electron beam and a high intensity CO2 laser pulse. Before the main laser Compton scattering for EUV radiation, the electron beam is prebunched by a high power seeding laser pulse with the Compton wavelength at a harmonic of the seeding laser [1]. In this paper, we describe the preliminary consideration for the EUV source development and a plan of experiment generating micro-bunched electron beam.

Original languageEnglish
Title of host publicationProceedings of the IEEE Particle Accelerator Conference
Number of pages3
Publication statusPublished - 2007
EventIEEE Particle Accelerator Conference, PAC07 - Albuquerque, NM
Duration: 2007 Jun 252007 Jun 29


OtherIEEE Particle Accelerator Conference, PAC07
CityAlbuquerque, NM


ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kashiwagi, S., Kato, R., Yang, J., Isoyama, G., Sakaue, K., Masuda, A., Nomoto, T., Gowa, T., Washio, M., Kuroda, R., & Urakawa, J. (2007). Development of compact EUV source based on laser compton scattering. In Proceedings of the IEEE Particle Accelerator Conference (pp. 2799-2801). [4440580]