Development of novel n+-in-p Silicon Planar Pixel Sensors for HL-LHC

Y. Unno, C. Gallrapp, R. Hori, J. Idarraga, S. Mitsui, R. Nagai, T. Kishida, A. Ishida, M. Ishihara, S. Kamada, T. Inuzuka, K. Yamamura, K. Hara, Y. Ikegami, O. Jinnouchi, A. Lounis, Y. Takahashi, Y. Takubo, S. Terada, K. HanagakiN. Kimura, K. Nagai, I. Nakano, R. Takashima, J. Tojo, Kohei Yorita

    Research output: Contribution to journalArticle

    15 Citations (Scopus)

    Abstract

    We have been developing highly radiation-tolerant n+-in-p planar pixel sensors for use in the high-luminosity LHC. Novel n+-in-p structures were made using various combinations of the bias structures (punch-through or polysilicon resistor), isolation structures (p-stop or p-spray), and thicknesses (320μm or 150μm). The 1-chip pixel modules with thin FE-I4 pixel sensors were evaluated using test beams, before and after 2×1015neq/cm2 irradiation. The full depletion voltages were estimated to be 44±10 V and 380±70 V, in the non-irradiated and the irradiated modules, respectively. A reduction of efficiency was observed in the vicinity of the four pixel corners and underneath the bias rail after the irradiation. The global efficiencies were >99% and >95% in the non-irradiated and the irradiated modules, respectively. The collected charges were uniform in the depth direction at bias voltages well above the full depletion voltages. The encapsulation of vulnerable edges with adhesive or parylene prevented HV sparking. Bump bonding with the SnAg solder bumps was performed at HPK with 150μm- and 320μm-thick sensors and chips. No disconnection of bumps was observed after 10 thermal cycles between -40 and +50 °C, with a temperature slew rate of >70K/min.

    Original languageEnglish
    Pages (from-to)72-77
    Number of pages6
    JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
    Volume699
    DOIs
    Publication statusPublished - 2013 Jan 21

    Fingerprint

    Pixels
    pixels
    Silicon
    modules
    sensors
    Sensors
    silicon
    depletion
    electric potential
    chips
    Irradiation
    irradiation
    punches
    rails
    Electric potential
    solders
    Bias voltage
    Electric sparks
    Encapsulation
    Polysilicon

    Keywords

    • Bump bonding
    • Encapsulation
    • HV protection
    • LHC
    • N-in-p
    • P-type
    • Pixel
    • Radiation hardness
    • Silicon sensor
    • Thermal cycling

    ASJC Scopus subject areas

    • Instrumentation
    • Nuclear and High Energy Physics

    Cite this

    Development of novel n+-in-p Silicon Planar Pixel Sensors for HL-LHC. / Unno, Y.; Gallrapp, C.; Hori, R.; Idarraga, J.; Mitsui, S.; Nagai, R.; Kishida, T.; Ishida, A.; Ishihara, M.; Kamada, S.; Inuzuka, T.; Yamamura, K.; Hara, K.; Ikegami, Y.; Jinnouchi, O.; Lounis, A.; Takahashi, Y.; Takubo, Y.; Terada, S.; Hanagaki, K.; Kimura, N.; Nagai, K.; Nakano, I.; Takashima, R.; Tojo, J.; Yorita, Kohei.

    In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 699, 21.01.2013, p. 72-77.

    Research output: Contribution to journalArticle

    Unno, Y, Gallrapp, C, Hori, R, Idarraga, J, Mitsui, S, Nagai, R, Kishida, T, Ishida, A, Ishihara, M, Kamada, S, Inuzuka, T, Yamamura, K, Hara, K, Ikegami, Y, Jinnouchi, O, Lounis, A, Takahashi, Y, Takubo, Y, Terada, S, Hanagaki, K, Kimura, N, Nagai, K, Nakano, I, Takashima, R, Tojo, J & Yorita, K 2013, 'Development of novel n+-in-p Silicon Planar Pixel Sensors for HL-LHC', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 699, pp. 72-77. https://doi.org/10.1016/j.nima.2012.04.061
    Unno, Y. ; Gallrapp, C. ; Hori, R. ; Idarraga, J. ; Mitsui, S. ; Nagai, R. ; Kishida, T. ; Ishida, A. ; Ishihara, M. ; Kamada, S. ; Inuzuka, T. ; Yamamura, K. ; Hara, K. ; Ikegami, Y. ; Jinnouchi, O. ; Lounis, A. ; Takahashi, Y. ; Takubo, Y. ; Terada, S. ; Hanagaki, K. ; Kimura, N. ; Nagai, K. ; Nakano, I. ; Takashima, R. ; Tojo, J. ; Yorita, Kohei. / Development of novel n+-in-p Silicon Planar Pixel Sensors for HL-LHC. In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2013 ; Vol. 699. pp. 72-77.
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    AU - Unno, Y.

    AU - Gallrapp, C.

    AU - Hori, R.

    AU - Idarraga, J.

    AU - Mitsui, S.

    AU - Nagai, R.

    AU - Kishida, T.

    AU - Ishida, A.

    AU - Ishihara, M.

    AU - Kamada, S.

    AU - Inuzuka, T.

    AU - Yamamura, K.

    AU - Hara, K.

    AU - Ikegami, Y.

    AU - Jinnouchi, O.

    AU - Lounis, A.

    AU - Takahashi, Y.

    AU - Takubo, Y.

    AU - Terada, S.

    AU - Hanagaki, K.

    AU - Kimura, N.

    AU - Nagai, K.

    AU - Nakano, I.

    AU - Takashima, R.

    AU - Tojo, J.

    AU - Yorita, Kohei

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    N2 - We have been developing highly radiation-tolerant n+-in-p planar pixel sensors for use in the high-luminosity LHC. Novel n+-in-p structures were made using various combinations of the bias structures (punch-through or polysilicon resistor), isolation structures (p-stop or p-spray), and thicknesses (320μm or 150μm). The 1-chip pixel modules with thin FE-I4 pixel sensors were evaluated using test beams, before and after 2×1015neq/cm2 irradiation. The full depletion voltages were estimated to be 44±10 V and 380±70 V, in the non-irradiated and the irradiated modules, respectively. A reduction of efficiency was observed in the vicinity of the four pixel corners and underneath the bias rail after the irradiation. The global efficiencies were >99% and >95% in the non-irradiated and the irradiated modules, respectively. The collected charges were uniform in the depth direction at bias voltages well above the full depletion voltages. The encapsulation of vulnerable edges with adhesive or parylene prevented HV sparking. Bump bonding with the SnAg solder bumps was performed at HPK with 150μm- and 320μm-thick sensors and chips. No disconnection of bumps was observed after 10 thermal cycles between -40 and +50 °C, with a temperature slew rate of >70K/min.

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    KW - HV protection

    KW - LHC

    KW - N-in-p

    KW - P-type

    KW - Pixel

    KW - Radiation hardness

    KW - Silicon sensor

    KW - Thermal cycling

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