Development of novel photodiodes as a photon counter

T. Miyachi, T. Edamura, S. Furuta, Nobuyuki Hasebe, M. Higuchi, M. Ishiwata, H. Kan, R. Kikuchi, T. Masumura, T. Matsuyama, A. Misaki, I. Nakamura, T. Sugawara, T. Tazawa, C. Tezuka

    Research output: Chapter in Book/Report/Conference proceedingConference contribution


    Superlattice type photodiodes of a GaAs-AlXGa1-XAs structure were studied at room temperature. A combination of potential-well width and barrier width was sensitive to the charge multiplication factor. Using a diode of 10nm well and 15nm barrier, the detector characteristics were investigated from a point of view of achieving a high gain. This type of photodiodes was confirmed to be sensitive to Cherenkov light generated in water. Effects of carrier doping up to 1018cm-3 at room temperature on the multiplication rate is discussed.

    Original languageEnglish
    Title of host publicationIEEE Nuclear Science Symposium and Medical Imaging Conference
    EditorsD. Merelli, J. Surget, M. Ulma
    Publication statusPublished - 2000
    Event2000 IEEE Nuclear Science Symposium Conference Record - Lyon
    Duration: 2000 Oct 152000 Oct 20


    Other2000 IEEE Nuclear Science Symposium Conference Record

    ASJC Scopus subject areas

    • Computer Vision and Pattern Recognition
    • Industrial and Manufacturing Engineering


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