Development of Packaging Technology for High Temperature Resistant SiC Module of Automobile Application

Kohei Tatsumi, Masakazu Inagaki, Kazuhito Kamei, Tomonori Iizuka, Hiroaki Narimatsu, Nobuaki Sato, Koji Shimizu, Kazutoshi Ueda, Akihiro Imakire, Masayuki Hikita, Rikiya Kamimura, Kazuhiko Sugiura, Kazuhiro Tsuruta, Keiji Toda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

Aiming for application to the inverter system of HEV and EV, we have developed a novel packaging technique for SiC power devices based on Nickel Micro Plating Bonding (NMPB) technique. We implemented heat resistant mounting of SiC schottky barrier diode (SBD) on the TO247 type package and confirmed the rectifying behavior even after the high temperature storage for 500hr at 250°C without any significant degradations. We also fabricated one-leg inverter modules mounting SBDs and MOSFETs using newly designed lead frames for NMPB process. The module showed normal rectifying and switching behavior even at high temperature such as about 250°C.

Original languageEnglish
Title of host publicationProceedings - IEEE 67th Electronic Components and Technology Conference, ECTC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1316-1321
Number of pages6
ISBN (Electronic)9781509043323
DOIs
Publication statusPublished - 2017 Aug 1
Event67th IEEE Electronic Components and Technology Conference, ECTC 2017 - Lake Buena Vista, United States
Duration: 2017 May 302017 Jun 2

Publication series

NameProceedings - Electronic Components and Technology Conference
ISSN (Print)0569-5503

Other

Other67th IEEE Electronic Components and Technology Conference, ECTC 2017
CountryUnited States
CityLake Buena Vista
Period17/5/3017/6/2

Keywords

  • EV
  • HEV
  • Inverter
  • Lead frame
  • MOSFET
  • Module
  • Nickel
  • Plating
  • SBD
  • SiC

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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