In order to minimize image degradation of IBIC (ion beam induced charge) during observation, the single ion beam induced charge (SIBIC) imaging technique has been developed by using a single ion microprobe, which enables us to hit a particular site of a device with single ions one by one. With only five He single ions per pixel, we have succeeded in obtaining reasonable quality images of an active area of a device. Since the number of defects induced by five single ions is quite low, the irradiated device was still alive for subsequent process and device diagnoses.
ASJC Scopus subject areas
- Nuclear and High Energy Physics