Development of the single ion beam induced charge (SIBIC) imaging technique using the single ion microprobe system

Koh Meishoku, Hara Ken-ichi, Horita Katsuyuki, Shigeta Bungo, Matsukawa Takashi, Kishida Atsushi, Takashi Tanii, Goto Makoto, Ohdomari Iwao

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    Abstract

    In order to minimize image degradation of IBIC (ion beam induced charge) during observation, the single ion beam induced charge (SIBIC) imaging technique has been developed by using a single ion microprobe, which enables us to hit a particular site of a device with single ions one by one. With only five He single ions per pixel, we have succeeded in obtaining reasonable quality images of an active area of a device. Since the number of defects induced by five single ions is quite low, the irradiated device was still alive for subsequent process and device diagnoses.

    Original languageEnglish
    Pages (from-to)82-86
    Number of pages5
    JournalNuclear Inst. and Methods in Physics Research, B
    Volume93
    Issue number1
    DOIs
    Publication statusPublished - 1994 Jul 1

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    ASJC Scopus subject areas

    • Surfaces, Coatings and Films
    • Instrumentation
    • Surfaces and Interfaces

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