Device-circuit interactions in extremely low voltage CMOS designs (invited)

Hiroshi Fuketa, Tadashi Yasufuku, Satoshi Iida, Makoto Takamiya, Masahiro Nomura, Hirofumi Shinohara, Takayasu Sakurai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

In this paper, energy and minimum operating voltage (V DDmin) are investigated for extremely-low-voltage CMOS logic designs. The dependences of energy and V DDmin on device parameters, such as threshold voltage, subthreshold swing parameter, and DIBL coefficient, are examined based on simulations and measurements.

Original languageEnglish
Title of host publication2011 International Electron Devices Meeting, IEDM 2011
Pages25.1.1-25.1.4
DOIs
Publication statusPublished - 2011 Dec 1
Externally publishedYes
Event2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
Duration: 2011 Dec 52011 Dec 7

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2011 IEEE International Electron Devices Meeting, IEDM 2011
CountryUnited States
CityWashington, DC
Period11/12/511/12/7

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Fuketa, H., Yasufuku, T., Iida, S., Takamiya, M., Nomura, M., Shinohara, H., & Sakurai, T. (2011). Device-circuit interactions in extremely low voltage CMOS designs (invited). In 2011 International Electron Devices Meeting, IEDM 2011 (pp. 25.1.1-25.1.4). [6131609] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2011.6131609