Device formation and the characterizations

David Eon, Hitoshi Umezawa, Takayuki Iwasaki, Takuya Murooka, Mutsuko Hatano, Daniel Araujo, Julien Pernot, Hiroshi Kawarada, Hiromitsu Kato, Toshiharu Makino, Satoshi Koizumi

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

As discussed in Chapter 3, Fundamental material’s nature of diamond, semiconductor diamonds are expected to decrease both conduction and switching losses of power devices. High temperature reliability and radiation hardness are also expected because of the large bandgap and strong covalent bond of diamond. This chapter reviews the state of the art of various devices such as unipolar and bipolar devices, especially Schottky barrier diodes, metal-semiconductor field-effect transistors, junction FETs, metal-oxide-semiconductor field-effect transistors (FETs), pin diodes, and bipolar junction transistors. Novel diamond devices such as Schottky-pn diode and cold cathode emitter, which overcome the trade-off relationship between on-resistance and breakdown voltage, will also be discussed.

Original languageEnglish
Title of host publicationPower Electronics Device Applications of Diamond Semiconductors
PublisherElsevier
Pages295-382
Number of pages88
ISBN (Electronic)9780081021835
ISBN (Print)9780081021842
DOIs
Publication statusPublished - 2018 Jan 1

Keywords

  • avalanche mechanism
  • barrier inhomogeneity
  • BJT
  • breakdown voltage
  • current density
  • electron emitters
  • JFET
  • MESFET
  • MOSFET
  • Schottky-pn diode
  • self-heating
  • two-dimensional hole gas

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

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