Device modeling of high performance diamond MESFETs using p-type surface semiconductive layers

H. Noda; A. Hokazono; H. Kawarada

doi:10.1016/s0925-9635(96)00725-x

Device modeling of high performance diamond MESFETs using p-type surface semiconductive layers

H. Noda^*, A. Hokazono, H. Kawarada

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The operation of high-performance diamond MESFETs using thin p-type surface semiconductive layers of undoped hydrogen-terminated CVD diamond films has been simulated. We have used diffusion profiles of shallow acceptors to describe the surface conductive layer. In order to describe metal/hydrogen/diamond interfaces, we have assumed an incomplete contact model where an atomic scale gap (∼0.5 nm) is inserted between the metal and the diamond. The results of this model have been compared with those obtained from direct metal/diamond contact model. The experimental I-V characteristics have been realized with acceptor density of 1 × 10¹³ cm^-2, and the transconductance per unit gate width of diamond MESFETs with 1 μm gate length is predicted to be nearly 50 mS mm^-1 by using both complete and incomplete contact models.

Original language	English
Pages (from-to)	865-868
Number of pages	4
Journal	Diamond and Related Materials
Volume	6
Issue number	5-7
DOIs	https://doi.org/10.1016/s0925-9635(96)00725-x
Publication status	Published - 1997 Apr

Keywords

Device
Hydrogen
Interface
Modeling

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Chemistry(all)
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/s0925-9635(96)00725-x

Cite this

@article{e33d370f97c2484182871172d42dd49f,

title = "Device modeling of high performance diamond MESFETs using p-type surface semiconductive layers",

abstract = "The operation of high-performance diamond MESFETs using thin p-type surface semiconductive layers of undoped hydrogen-terminated CVD diamond films has been simulated. We have used diffusion profiles of shallow acceptors to describe the surface conductive layer. In order to describe metal/hydrogen/diamond interfaces, we have assumed an incomplete contact model where an atomic scale gap (∼0.5 nm) is inserted between the metal and the diamond. The results of this model have been compared with those obtained from direct metal/diamond contact model. The experimental I-V characteristics have been realized with acceptor density of 1 × 1013 cm-2, and the transconductance per unit gate width of diamond MESFETs with 1 μm gate length is predicted to be nearly 50 mS mm-1 by using both complete and incomplete contact models.",

keywords = "Device, Hydrogen, Interface, Modeling",

author = "H. Noda and A. Hokazono and H. Kawarada",

note = "Funding Information: The authors are grateful to Prof. I. Ohdomari of the Department of Electronics & Communication, Waseda University and Dr. Kazuyuki Hirose of Institute of Space and Astronautical Science for discussion. We would like to thank Mr. S. Shikata of Sumitomo Electric Industries for providing synthetic Ib diamond substrates. This work has been supported in part by the Grant-in-aid for General Scientific Research (07650384) from the Ministry of Education, Science and Culture of Japan.",

year = "1997",

month = apr,

doi = "10.1016/s0925-9635(96)00725-x",

language = "English",

volume = "6",

pages = "865--868",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier BV",

number = "5-7",

}

TY - JOUR

T1 - Device modeling of high performance diamond MESFETs using p-type surface semiconductive layers

AU - Noda, H.

AU - Hokazono, A.

AU - Kawarada, H.

N1 - Funding Information: The authors are grateful to Prof. I. Ohdomari of the Department of Electronics & Communication, Waseda University and Dr. Kazuyuki Hirose of Institute of Space and Astronautical Science for discussion. We would like to thank Mr. S. Shikata of Sumitomo Electric Industries for providing synthetic Ib diamond substrates. This work has been supported in part by the Grant-in-aid for General Scientific Research (07650384) from the Ministry of Education, Science and Culture of Japan.

PY - 1997/4

Y1 - 1997/4

N2 - The operation of high-performance diamond MESFETs using thin p-type surface semiconductive layers of undoped hydrogen-terminated CVD diamond films has been simulated. We have used diffusion profiles of shallow acceptors to describe the surface conductive layer. In order to describe metal/hydrogen/diamond interfaces, we have assumed an incomplete contact model where an atomic scale gap (∼0.5 nm) is inserted between the metal and the diamond. The results of this model have been compared with those obtained from direct metal/diamond contact model. The experimental I-V characteristics have been realized with acceptor density of 1 × 1013 cm-2, and the transconductance per unit gate width of diamond MESFETs with 1 μm gate length is predicted to be nearly 50 mS mm-1 by using both complete and incomplete contact models.

AB - The operation of high-performance diamond MESFETs using thin p-type surface semiconductive layers of undoped hydrogen-terminated CVD diamond films has been simulated. We have used diffusion profiles of shallow acceptors to describe the surface conductive layer. In order to describe metal/hydrogen/diamond interfaces, we have assumed an incomplete contact model where an atomic scale gap (∼0.5 nm) is inserted between the metal and the diamond. The results of this model have been compared with those obtained from direct metal/diamond contact model. The experimental I-V characteristics have been realized with acceptor density of 1 × 1013 cm-2, and the transconductance per unit gate width of diamond MESFETs with 1 μm gate length is predicted to be nearly 50 mS mm-1 by using both complete and incomplete contact models.

KW - Device

KW - Hydrogen

KW - Interface

KW - Modeling

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UR - http://www.scopus.com/inward/citedby.url?scp=0000658501&partnerID=8YFLogxK

U2 - 10.1016/s0925-9635(96)00725-x

DO - 10.1016/s0925-9635(96)00725-x

M3 - Article

AN - SCOPUS:0000658501

SN - 0925-9635

VL - 6

SP - 865

EP - 868

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 5-7

ER -

Device modeling of high performance diamond MESFETs using p-type surface semiconductive layers

Abstract

Keywords

ASJC Scopus subject areas

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