Device modeling of high performance diamond MESFETs using p-type surface semiconductive layers

H. Noda, A. Hokazono, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    11 Citations (Scopus)

    Abstract

    The operation of high-performance diamond MESFETs using thin p-type surface semiconductive layers of undoped hydrogen-terminated CVD diamond films has been simulated. We have used diffusion profiles of shallow acceptors to describe the surface conductive layer. In order to describe metal/hydrogen/diamond interfaces, we have assumed an incomplete contact model where an atomic scale gap (∼0.5 nm) is inserted between the metal and the diamond. The results of this model have been compared with those obtained from direct metal/diamond contact model. The experimental I-V characteristics have been realized with acceptor density of 1 × 1013 cm-2, and the transconductance per unit gate width of diamond MESFETs with 1 μm gate length is predicted to be nearly 50 mS mm-1 by using both complete and incomplete contact models.

    Original languageEnglish
    Pages (from-to)865-868
    Number of pages4
    JournalDiamond and Related Materials
    Volume6
    Issue number5-7
    Publication statusPublished - 1997 Apr

    Fingerprint

    Diamond
    Diamonds
    surface layers
    field effect transistors
    diamonds
    Metals
    Hydrogen
    metals
    Diamond films
    Transconductance
    transconductance
    hydrogen
    diamond films
    Chemical vapor deposition
    vapor deposition
    profiles

    Keywords

    • Device
    • Hydrogen
    • Interface
    • Modeling

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry
    • Surfaces, Coatings and Films
    • Surfaces and Interfaces

    Cite this

    Device modeling of high performance diamond MESFETs using p-type surface semiconductive layers. / Noda, H.; Hokazono, A.; Kawarada, Hiroshi.

    In: Diamond and Related Materials, Vol. 6, No. 5-7, 04.1997, p. 865-868.

    Research output: Contribution to journalArticle

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