Device modeling of high performance diamond MESFETs using p-type surface semiconductive layers

H. Noda, A. Hokazono, H. Kawarada

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The operation of high-performance diamond MESFETs using thin p-type surface semiconductive layers of undoped hydrogen-terminated CVD diamond films has been simulated. We have used diffusion profiles of shallow acceptors to describe the surface conductive layer. In order to describe metal/hydrogen/diamond interfaces, we have assumed an incomplete contact model where an atomic scale gap (∼0.5 nm) is inserted between the metal and the diamond. The results of this model have been compared with those obtained from direct metal/diamond contact model. The experimental I-V characteristics have been realized with acceptor density of 1 × 1013 cm-2, and the transconductance per unit gate width of diamond MESFETs with 1 μm gate length is predicted to be nearly 50 mS mm-1 by using both complete and incomplete contact models.

Original languageEnglish
Pages (from-to)865-868
Number of pages4
JournalDiamond and Related Materials
Volume6
Issue number5-7
Publication statusPublished - 1997 Apr 1

Keywords

  • Device
  • Hydrogen
  • Interface
  • Modeling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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