Device simulations of field effect transistors on hydrogen-terminated diamond surfaces

Kazuo Tsugawa, Kazutoshi Morita, Hiroshi Kawarada

Research output: Contribution to journalArticle

Original languageEnglish
Number of pages1
JournalNew Diamond and Frontier Carbon Technology
Volume7
Issue number5-6
Publication statusPublished - 1997 Dec 1

Keywords

  • Hydrogen-terminated diamond surface
  • MESFET
  • MOSFET
  • p-type semiconductive layer

ASJC Scopus subject areas

  • Materials Science(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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