Device simulations of field effect transistors on hydrogen-terminated diamond surfaces

Kazuo Tsugawa, Kazutoshi Morita, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    Original languageEnglish
    Pages (from-to)354
    Number of pages1
    JournalNew Diamond and Frontier Carbon Technology
    Volume7
    Issue number5-6
    Publication statusPublished - 1997

    Fingerprint

    Diamond
    Field effect transistors
    Hydrogen
    Diamonds
    field effect transistors
    diamonds
    hydrogen
    simulation

    Keywords

    • Hydrogen-terminated diamond surface
    • MESFET
    • MOSFET
    • p-type semiconductive layer

    ASJC Scopus subject areas

    • Materials Science(all)
    • Surfaces, Coatings and Films
    • Surfaces and Interfaces

    Cite this

    Device simulations of field effect transistors on hydrogen-terminated diamond surfaces. / Tsugawa, Kazuo; Morita, Kazutoshi; Kawarada, Hiroshi.

    In: New Diamond and Frontier Carbon Technology, Vol. 7, No. 5-6, 1997, p. 354.

    Research output: Contribution to journalArticle

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    AU - Morita, Kazutoshi

    AU - Kawarada, Hiroshi

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