Diamond-based RF power transistors

Fundamentals and applications

M. Kasu, K. Ueda, Y. Yamauchi, A. Tallaire, Toshiki Makimoto

Research output: Contribution to journalArticle

70 Citations (Scopus)

Abstract

The present status of diamond-based transistors for high-frequency and high-power applications is reviewed. We have achieved the drain current density of 550 mA/mm, cut-off frequencies for current gain (fT) and power gain (fMAX) of 45 GHz and 120 GHz, respectively, and output-power density of 2.1 W/mm at 1 GHz in class-A operation of a field-effect transistor (FET) with hydrogen (H)-surface-terminated diamond. We have found that gate capacitance can be separated into depletion-layer capacitance and insulator capacitance. Concerning a stability of H-surface termination, no apparent decrease in the current for an FET without a gate contact was observed, but gate bias stress results in a slight decrease in the drain current and simultaneously an increase in the gate leakage current.

Original languageEnglish
Pages (from-to)1010-1015
Number of pages6
JournalDiamond and Related Materials
Volume16
Issue number4-7 SPEC. ISS.
DOIs
Publication statusPublished - 2007 Apr
Externally publishedYes

Fingerprint

Diamond
Diamonds
Capacitance
transistors
diamonds
Drain current
Field effect transistors
capacitance
Hydrogen
field effect transistors
Cutoff frequency
Leakage currents
power gain
Transistors
Current density
radiant flux density
depletion
leakage
cut-off
insulators

Keywords

  • Diamond
  • Hydrogen passivation
  • RF characteristics
  • Transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Diamond-based RF power transistors : Fundamentals and applications. / Kasu, M.; Ueda, K.; Yamauchi, Y.; Tallaire, A.; Makimoto, Toshiki.

In: Diamond and Related Materials, Vol. 16, No. 4-7 SPEC. ISS., 04.2007, p. 1010-1015.

Research output: Contribution to journalArticle

Kasu, M. ; Ueda, K. ; Yamauchi, Y. ; Tallaire, A. ; Makimoto, Toshiki. / Diamond-based RF power transistors : Fundamentals and applications. In: Diamond and Related Materials. 2007 ; Vol. 16, No. 4-7 SPEC. ISS. pp. 1010-1015.
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