Diamond FETs on boron-implanted and high-pressure and high-temperature annealed homoepitaxial diamond

Kenji Ueda; Yoshiharu Yamauchi; Makoto Kasu

doi:10.1002/pssc.200779314

Diamond FETs on boron-implanted and high-pressure and high-temperature annealed homoepitaxial diamond

Kenji Ueda^*, Yoshiharu Yamauchi, Makoto Kasu

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

By combining ion-implantation and high-pressure and hightemperature (HPHT) annealing, we have obtained boron (B)-implanted diamond layers with a high a hole concentration and mobility and succeeded in fabricating diamond FETs using the B-implanted layers. For a B dose of 3 × 10¹⁵ cm ^-2, a sheet hole concentration and mobility of 1.6 × 10 ¹³ cm^-2 and 41 cm²/Vs at 300 K were obtained. Diamond FETs fabricated on the B-implanted layer showed maximum drain current of 0.15 mA/mm at gate voltage of -2 V and maximum breakdown voltage of 530 V, corresponding to ∼1.1 MV/cm. The breakdown voltage value is comparable to those of Schottky diodes using B-doped CVD diamond films. These results confirm the high quality of the B-implanted and HPHT-annealed layers.

Original language	English
Pages (from-to)	3175-3177
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	5
Issue number	9
DOIs	https://doi.org/10.1002/pssc.200779314
Publication status	Published - 2008
Externally published	Yes
Event	34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan Duration: 2007 Oct 15 → 2007 Oct 18

ASJC Scopus subject areas

Condensed Matter Physics

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title = "Diamond FETs on boron-implanted and high-pressure and high-temperature annealed homoepitaxial diamond",

abstract = "By combining ion-implantation and high-pressure and hightemperature (HPHT) annealing, we have obtained boron (B)-implanted diamond layers with a high a hole concentration and mobility and succeeded in fabricating diamond FETs using the B-implanted layers. For a B dose of 3 × 1015 cm -2, a sheet hole concentration and mobility of 1.6 × 10 13 cm-2 and 41 cm2/Vs at 300 K were obtained. Diamond FETs fabricated on the B-implanted layer showed maximum drain current of 0.15 mA/mm at gate voltage of -2 V and maximum breakdown voltage of 530 V, corresponding to ∼1.1 MV/cm. The breakdown voltage value is comparable to those of Schottky diodes using B-doped CVD diamond films. These results confirm the high quality of the B-implanted and HPHT-annealed layers.",

author = "Kenji Ueda and Yoshiharu Yamauchi and Makoto Kasu",

year = "2008",

doi = "10.1002/pssc.200779314",

language = "English",

volume = "5",

pages = "3175--3177",

journal = "Physica Status Solidi C: Conferences",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "9",

note = "34th International Symposium on Compound Semiconductors, ISCS-2007 ; Conference date: 15-10-2007 Through 18-10-2007",

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TY - JOUR

T1 - Diamond FETs on boron-implanted and high-pressure and high-temperature annealed homoepitaxial diamond

AU - Ueda, Kenji

AU - Yamauchi, Yoshiharu

AU - Kasu, Makoto

PY - 2008

Y1 - 2008

N2 - By combining ion-implantation and high-pressure and hightemperature (HPHT) annealing, we have obtained boron (B)-implanted diamond layers with a high a hole concentration and mobility and succeeded in fabricating diamond FETs using the B-implanted layers. For a B dose of 3 × 1015 cm -2, a sheet hole concentration and mobility of 1.6 × 10 13 cm-2 and 41 cm2/Vs at 300 K were obtained. Diamond FETs fabricated on the B-implanted layer showed maximum drain current of 0.15 mA/mm at gate voltage of -2 V and maximum breakdown voltage of 530 V, corresponding to ∼1.1 MV/cm. The breakdown voltage value is comparable to those of Schottky diodes using B-doped CVD diamond films. These results confirm the high quality of the B-implanted and HPHT-annealed layers.

AB - By combining ion-implantation and high-pressure and hightemperature (HPHT) annealing, we have obtained boron (B)-implanted diamond layers with a high a hole concentration and mobility and succeeded in fabricating diamond FETs using the B-implanted layers. For a B dose of 3 × 1015 cm -2, a sheet hole concentration and mobility of 1.6 × 10 13 cm-2 and 41 cm2/Vs at 300 K were obtained. Diamond FETs fabricated on the B-implanted layer showed maximum drain current of 0.15 mA/mm at gate voltage of -2 V and maximum breakdown voltage of 530 V, corresponding to ∼1.1 MV/cm. The breakdown voltage value is comparable to those of Schottky diodes using B-doped CVD diamond films. These results confirm the high quality of the B-implanted and HPHT-annealed layers.

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DO - 10.1002/pssc.200779314

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VL - 5

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EP - 3177

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

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T2 - 34th International Symposium on Compound Semiconductors, ISCS-2007

Y2 - 15 October 2007 through 18 October 2007

ER -

Diamond FETs on boron-implanted and high-pressure and high-temperature annealed homoepitaxial diamond

Abstract

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