By combining ion-implantation and high-pressure and hightemperature (HPHT) annealing, we have obtained boron (B)-implanted diamond layers with a high a hole concentration and mobility and succeeded in fabricating diamond FETs using the B-implanted layers. For a B dose of 3 × 1015 cm -2, a sheet hole concentration and mobility of 1.6 × 10 13 cm-2 and 41 cm2/Vs at 300 K were obtained. Diamond FETs fabricated on the B-implanted layer showed maximum drain current of 0.15 mA/mm at gate voltage of -2 V and maximum breakdown voltage of 530 V, corresponding to ∼1.1 MV/cm. The breakdown voltage value is comparable to those of Schottky diodes using B-doped CVD diamond films. These results confirm the high quality of the B-implanted and HPHT-annealed layers.
|Number of pages||3|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2008|
|Event||34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan|
Duration: 2007 Oct 15 → 2007 Oct 18
ASJC Scopus subject areas
- Condensed Matter Physics