Diamond MISFETs fabricated on high quality polycrystalline CVD diamond

K. Hirama, H. Takayanagi, S. Yamauchi, Y. Jingu, H. Umezawa, Hiroshi Kawarada

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    3 Citations (Scopus)

    Abstract

    Diamond metal-insulator-semiconductor field-effect transistors (MISFETs) with a 0.1 μm gate length were fabricated on high quality Ha-type polycrystalline diamond. A maximum drain current density of 650 mA/mm and a cut-off frequency (fT) of 42 GHz were obtained. The drain current density is the highest value reported to date for diamond FETs.

    Original languageEnglish
    Title of host publicationProceedings of the International Symposium on Power Semiconductor Devices and ICs
    Pages269-272
    Number of pages4
    DOIs
    Publication statusPublished - 2007
    Event19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07 - Jeju Island
    Duration: 2007 May 272007 May 31

    Other

    Other19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07
    CityJeju Island
    Period07/5/2707/5/31

    Fingerprint

    MISFET devices
    Chemical vapor deposition
    Diamonds
    Drain current
    Current density
    Cutoff frequency
    Field effect transistors

    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    Hirama, K., Takayanagi, H., Yamauchi, S., Jingu, Y., Umezawa, H., & Kawarada, H. (2007). Diamond MISFETs fabricated on high quality polycrystalline CVD diamond. In Proceedings of the International Symposium on Power Semiconductor Devices and ICs (pp. 269-272). [4294984] https://doi.org/10.1109/ISPSD.2007.4294984

    Diamond MISFETs fabricated on high quality polycrystalline CVD diamond. / Hirama, K.; Takayanagi, H.; Yamauchi, S.; Jingu, Y.; Umezawa, H.; Kawarada, Hiroshi.

    Proceedings of the International Symposium on Power Semiconductor Devices and ICs. 2007. p. 269-272 4294984.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Hirama, K, Takayanagi, H, Yamauchi, S, Jingu, Y, Umezawa, H & Kawarada, H 2007, Diamond MISFETs fabricated on high quality polycrystalline CVD diamond. in Proceedings of the International Symposium on Power Semiconductor Devices and ICs., 4294984, pp. 269-272, 19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07, Jeju Island, 07/5/27. https://doi.org/10.1109/ISPSD.2007.4294984
    Hirama K, Takayanagi H, Yamauchi S, Jingu Y, Umezawa H, Kawarada H. Diamond MISFETs fabricated on high quality polycrystalline CVD diamond. In Proceedings of the International Symposium on Power Semiconductor Devices and ICs. 2007. p. 269-272. 4294984 https://doi.org/10.1109/ISPSD.2007.4294984
    Hirama, K. ; Takayanagi, H. ; Yamauchi, S. ; Jingu, Y. ; Umezawa, H. ; Kawarada, Hiroshi. / Diamond MISFETs fabricated on high quality polycrystalline CVD diamond. Proceedings of the International Symposium on Power Semiconductor Devices and ICs. 2007. pp. 269-272
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    AU - Kawarada, Hiroshi

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