Diamond MISFETs fabricated on high quality polycrystalline CVD diamond

K. Hirama, H. Takayanagi, S. Yamauchi, Y. Jingu, H. Umezawa, H. Kawarada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Diamond metal-insulator-semiconductor field-effect transistors (MISFETs) with a 0.1 μm gate length were fabricated on high quality Ha-type polycrystalline diamond. A maximum drain current density of 650 mA/mm and a cut-off frequency (fT) of 42 GHz were obtained. The drain current density is the highest value reported to date for diamond FETs.

Original languageEnglish
Title of host publicationProceedings of 19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07
Pages269-272
Number of pages4
DOIs
Publication statusPublished - 2007 Dec 1
Event19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07 - Jeju Island, Korea, Republic of
Duration: 2007 May 272007 May 31

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)1063-6854

Conference

Conference19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07
CountryKorea, Republic of
CityJeju Island
Period07/5/2707/5/31

ASJC Scopus subject areas

  • Engineering(all)

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