Diamond MOSFETs using 2D hole gas with 1700V breakdown voltage

H. Kawarada; T. Yamada; D. Xu; Y. Kitabayashi; M. Shibata; D. Matsumura; M. Kobayashi; T. Saito; T. Kudo; M. Inaba; A. Hiraiwa

doi:10.1109/ISPSD.2016.7520883

Diamond MOSFETs using 2D hole gas with 1700V breakdown voltage

H. Kawarada, T. Yamada, D. Xu, Y. Kitabayashi, M. Shibata, D. Matsumura, M. Kobayashi, T. Saito, T. Kudo, M. Inaba, A. Hiraiwa

School of Fundamental Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

36 Citations (Scopus)

Abstract

More than 1600V breakdown voltages have been obtained in hydrogen terminated (C-H) diamond planar p-channel MOSFETs with gate-drain distance of 16-22 μm. The drain current density exceeds 100mA/mm in the FETs. The blocking voltage and drain current characteristics are comparable to those of n-channel AlGaN/GaN FETs and planar SiC MOSFETs in a similar device size. Atomic layer deposited Al₂O₃ works as gate insulator and passivation layer. It also induces the 2 dimensional hole gas ubiquitously on C-H diamond surface not only in planar, but in a trench gate structure. The first diamond vertical MOSFET has also operated using the trench structure.

Original language	English
Title of host publication	Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	483-486
Number of pages	4
ISBN (Electronic)	9781467387682
DOIs	https://doi.org/10.1109/ISPSD.2016.7520883
Publication status	Published - 2016 Jul 25
Event	28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 - Prague, Czech Republic Duration: 2016 Jun 12 → 2016 Jun 16

Publication series

Name	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume	2016-July
ISSN (Print)	1063-6854

Other

Other	28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
Country/Territory	Czech Republic
City	Prague
Period	16/6/12 → 16/6/16

Keywords

2 dimensional hole gas
AlO
C-H bond
MOSFET
diamond

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1109/ISPSD.2016.7520883

Cite this

Kawarada, H., Yamada, T., Xu, D., Kitabayashi, Y., Shibata, M., Matsumura, D., Kobayashi, M., Saito, T., Kudo, T., Inaba, M., & Hiraiwa, A. (2016). Diamond MOSFETs using 2D hole gas with 1700V breakdown voltage. In Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 (pp. 483-486). [7520883] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2016-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2016.7520883

Diamond MOSFETs using 2D hole gas with 1700V breakdown voltage. / Kawarada, H.; Yamada, T.; Xu, D. et al.

Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 483-486 7520883 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2016-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kawarada, H, Yamada, T, Xu, D, Kitabayashi, Y, Shibata, M, Matsumura, D, Kobayashi, M, Saito, T, Kudo, T, Inaba, M & Hiraiwa, A 2016, Diamond MOSFETs using 2D hole gas with 1700V breakdown voltage. in Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016., 7520883, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, vol. 2016-July, Institute of Electrical and Electronics Engineers Inc., pp. 483-486, 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016, Prague, Czech Republic, 16/6/12. https://doi.org/10.1109/ISPSD.2016.7520883

Kawarada H, Yamada T, Xu D, Kitabayashi Y, Shibata M, Matsumura D et al. Diamond MOSFETs using 2D hole gas with 1700V breakdown voltage. In Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 483-486. 7520883. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). doi: 10.1109/ISPSD.2016.7520883

Kawarada, H. ; Yamada, T. ; Xu, D. et al. / Diamond MOSFETs using 2D hole gas with 1700V breakdown voltage. Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 483-486 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

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abstract = "More than 1600V breakdown voltages have been obtained in hydrogen terminated (C-H) diamond planar p-channel MOSFETs with gate-drain distance of 16-22 μm. The drain current density exceeds 100mA/mm in the FETs. The blocking voltage and drain current characteristics are comparable to those of n-channel AlGaN/GaN FETs and planar SiC MOSFETs in a similar device size. Atomic layer deposited Al2O3 works as gate insulator and passivation layer. It also induces the 2 dimensional hole gas ubiquitously on C-H diamond surface not only in planar, but in a trench gate structure. The first diamond vertical MOSFET has also operated using the trench structure.",

keywords = "2 dimensional hole gas, AlO, C-H bond, MOSFET, diamond",

author = "H. Kawarada and T. Yamada and D. Xu and Y. Kitabayashi and M. Shibata and D. Matsumura and M. Kobayashi and T. Saito and T. Kudo and M. Inaba and A. Hiraiwa",

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AU - Matsumura, D.

AU - Kobayashi, M.

AU - Saito, T.

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AU - Inaba, M.

AU - Hiraiwa, A.

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AB - More than 1600V breakdown voltages have been obtained in hydrogen terminated (C-H) diamond planar p-channel MOSFETs with gate-drain distance of 16-22 μm. The drain current density exceeds 100mA/mm in the FETs. The blocking voltage and drain current characteristics are comparable to those of n-channel AlGaN/GaN FETs and planar SiC MOSFETs in a similar device size. Atomic layer deposited Al2O3 works as gate insulator and passivation layer. It also induces the 2 dimensional hole gas ubiquitously on C-H diamond surface not only in planar, but in a trench gate structure. The first diamond vertical MOSFET has also operated using the trench structure.

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Diamond MOSFETs using 2D hole gas with 1700V breakdown voltage

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