Diamond MOSFETs using 2D hole gas with 1700V breakdown voltage

Hiroshi Kawarada, T. Yamada, D. Xu, Y. Kitabayashi, M. Shibata, D. Matsumura, M. Kobayashi, T. Saito, T. Kudo, M. Inaba, A. Hiraiwa

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    9 Citations (Scopus)

    Abstract

    More than 1600V breakdown voltages have been obtained in hydrogen terminated (C-H) diamond planar p-channel MOSFETs with gate-drain distance of 16-22 μm. The drain current density exceeds 100mA/mm in the FETs. The blocking voltage and drain current characteristics are comparable to those of n-channel AlGaN/GaN FETs and planar SiC MOSFETs in a similar device size. Atomic layer deposited Al2O3 works as gate insulator and passivation layer. It also induces the 2 dimensional hole gas ubiquitously on C-H diamond surface not only in planar, but in a trench gate structure. The first diamond vertical MOSFET has also operated using the trench structure.

    Original languageEnglish
    Title of host publicationProceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages483-486
    Number of pages4
    Volume2016-July
    ISBN (Electronic)9781467387682
    DOIs
    Publication statusPublished - 2016 Jul 25
    Event28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 - Prague, Czech Republic
    Duration: 2016 Jun 122016 Jun 16

    Other

    Other28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
    CountryCzech Republic
    CityPrague
    Period16/6/1216/6/16

    Fingerprint

    Electric breakdown
    Diamonds
    Drain current
    Field effect transistors
    Gases
    Hydrogen
    Passivation
    Current density
    Electric potential

    Keywords

    • 2 dimensional hole gas
    • AlO
    • C-H bond
    • diamond
    • MOSFET

    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    Kawarada, H., Yamada, T., Xu, D., Kitabayashi, Y., Shibata, M., Matsumura, D., ... Hiraiwa, A. (2016). Diamond MOSFETs using 2D hole gas with 1700V breakdown voltage. In Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 (Vol. 2016-July, pp. 483-486). [7520883] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2016.7520883

    Diamond MOSFETs using 2D hole gas with 1700V breakdown voltage. / Kawarada, Hiroshi; Yamada, T.; Xu, D.; Kitabayashi, Y.; Shibata, M.; Matsumura, D.; Kobayashi, M.; Saito, T.; Kudo, T.; Inaba, M.; Hiraiwa, A.

    Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Vol. 2016-July Institute of Electrical and Electronics Engineers Inc., 2016. p. 483-486 7520883.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Kawarada, H, Yamada, T, Xu, D, Kitabayashi, Y, Shibata, M, Matsumura, D, Kobayashi, M, Saito, T, Kudo, T, Inaba, M & Hiraiwa, A 2016, Diamond MOSFETs using 2D hole gas with 1700V breakdown voltage. in Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. vol. 2016-July, 7520883, Institute of Electrical and Electronics Engineers Inc., pp. 483-486, 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016, Prague, Czech Republic, 16/6/12. https://doi.org/10.1109/ISPSD.2016.7520883
    Kawarada H, Yamada T, Xu D, Kitabayashi Y, Shibata M, Matsumura D et al. Diamond MOSFETs using 2D hole gas with 1700V breakdown voltage. In Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Vol. 2016-July. Institute of Electrical and Electronics Engineers Inc. 2016. p. 483-486. 7520883 https://doi.org/10.1109/ISPSD.2016.7520883
    Kawarada, Hiroshi ; Yamada, T. ; Xu, D. ; Kitabayashi, Y. ; Shibata, M. ; Matsumura, D. ; Kobayashi, M. ; Saito, T. ; Kudo, T. ; Inaba, M. ; Hiraiwa, A. / Diamond MOSFETs using 2D hole gas with 1700V breakdown voltage. Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Vol. 2016-July Institute of Electrical and Electronics Engineers Inc., 2016. pp. 483-486
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    AU - Kawarada, Hiroshi

    AU - Yamada, T.

    AU - Xu, D.

    AU - Kitabayashi, Y.

    AU - Shibata, M.

    AU - Matsumura, D.

    AU - Kobayashi, M.

    AU - Saito, T.

    AU - Kudo, T.

    AU - Inaba, M.

    AU - Hiraiwa, A.

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    N2 - More than 1600V breakdown voltages have been obtained in hydrogen terminated (C-H) diamond planar p-channel MOSFETs with gate-drain distance of 16-22 μm. The drain current density exceeds 100mA/mm in the FETs. The blocking voltage and drain current characteristics are comparable to those of n-channel AlGaN/GaN FETs and planar SiC MOSFETs in a similar device size. Atomic layer deposited Al2O3 works as gate insulator and passivation layer. It also induces the 2 dimensional hole gas ubiquitously on C-H diamond surface not only in planar, but in a trench gate structure. The first diamond vertical MOSFET has also operated using the trench structure.

    AB - More than 1600V breakdown voltages have been obtained in hydrogen terminated (C-H) diamond planar p-channel MOSFETs with gate-drain distance of 16-22 μm. The drain current density exceeds 100mA/mm in the FETs. The blocking voltage and drain current characteristics are comparable to those of n-channel AlGaN/GaN FETs and planar SiC MOSFETs in a similar device size. Atomic layer deposited Al2O3 works as gate insulator and passivation layer. It also induces the 2 dimensional hole gas ubiquitously on C-H diamond surface not only in planar, but in a trench gate structure. The first diamond vertical MOSFET has also operated using the trench structure.

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    KW - AlO

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    KW - MOSFET

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