Diamond semiconductor possesses exceptional physical properties, such as high thermal conductivity, high breakdown field, and high mobility, and is therefore expected to offer the highest performance among semiconductors as high-frequency, high-power transistors. At present the most critical issue in achieving diamond transistors is the lack of an n-type or p-type dopant with low activation energy. This paper reviews approaches towards electronic-device application of diamond done mainly by NTT Basic Research Laboratories. First it describes our diamond field-effect transistors with 0.1-μm gate length, which exhibit high cut-off frequencies for the current and power gains, fT and fMAX, of 45 GHz and of 120 GHz, and output power density of 2.1 W/mm at 1 GHz. Next it shows how doping efficiency in ion implantation can be improved by using high-pressure high-temperature annealing. Finally, it describes our concept of diamond/ nitride heterostructure and presents results that confirm its feasibility.
|Number of pages||4|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2008|
|Event||34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan|
Duration: 2007 Oct 15 → 2007 Oct 18
ASJC Scopus subject areas
- Condensed Matter Physics