Fluorine-doped thin silicon dioxide films were synthesized by plasma-enhanced chemical vapor deposition of tetraethoxysilane and CF4, and the dielectric strength was measured with a serf-healing breakdown technique by applying short duration voltage pulses. As a result, the film containing a higher amount of fluorine has a higher dielectric strength. The reason for this increase is discussed from various aspects, and two persuasive mechanisms are presented.
|Number of pages||4|
|Publication status||Published - 1998 Dec 1|
|Event||Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics - Vasteras, Sweden|
Duration: 1998 Jun 22 → 1998 Jun 25
|Other||Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics|
|Period||98/6/22 → 98/6/25|
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