Dielectric breakdown in F-doped SiO2 films formed by plasma-enhanced chemical vapor deposition

Hiromitsu Kato, Shingo Sakai, Akihiro Takami, Yoshimichi Ohki, Keisuke Ishii

Research output: Contribution to conferencePaper

Abstract

Fluorine-doped thin silicon dioxide films were synthesized by plasma-enhanced chemical vapor deposition of tetraethoxysilane and CF4, and the dielectric strength was measured with a serf-healing breakdown technique by applying short duration voltage pulses. As a result, the film containing a higher amount of fluorine has a higher dielectric strength. The reason for this increase is discussed from various aspects, and two persuasive mechanisms are presented.

Original languageEnglish
Pages368-371
Number of pages4
Publication statusPublished - 1998 Dec 1
EventProceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics - Vasteras, Sweden
Duration: 1998 Jun 221998 Jun 25

Other

OtherProceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics
CityVasteras, Sweden
Period98/6/2298/6/25

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kato, H., Sakai, S., Takami, A., Ohki, Y., & Ishii, K. (1998). Dielectric breakdown in F-doped SiO2 films formed by plasma-enhanced chemical vapor deposition. 368-371. Paper presented at Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics, Vasteras, Sweden, .