Dielectric breakdown in F-doped SiO2 films formed by plasma-enhanced chemical vapor deposition

Hiromitsu Kato, Shingo Sakai, Akihiro Takami, Yoshimichi Ohki, Keisuke Ishii

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Fluorine-doped thin silicon dioxide films were synthesized by plasma-enhanced chemical vapor deposition of tetraethoxysilane and CF4, and the dielectric strength was measured with a serf-healing breakdown technique by applying short duration voltage pulses. As a result, the film containing a higher amount of fluorine has a higher dielectric strength. The reason for this increase is discussed from various aspects, and two persuasive mechanisms are presented.

    Original languageEnglish
    Title of host publicationIEEE International Conference on Conduction & Breakdown in Solid Dielectrics
    Place of PublicationPiscataway, NJ, United States
    PublisherIEEE
    Pages368-371
    Number of pages4
    Publication statusPublished - 1998
    EventProceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics - Vasteras, Sweden
    Duration: 1998 Jun 221998 Jun 25

    Other

    OtherProceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics
    CityVasteras, Sweden
    Period98/6/2298/6/25

    Fingerprint

    Plasma enhanced chemical vapor deposition
    Electric breakdown
    Fluorine
    Silica
    Electric potential
    Polymers

    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    Kato, H., Sakai, S., Takami, A., Ohki, Y., & Ishii, K. (1998). Dielectric breakdown in F-doped SiO2 films formed by plasma-enhanced chemical vapor deposition. In IEEE International Conference on Conduction & Breakdown in Solid Dielectrics (pp. 368-371). Piscataway, NJ, United States: IEEE.

    Dielectric breakdown in F-doped SiO2 films formed by plasma-enhanced chemical vapor deposition. / Kato, Hiromitsu; Sakai, Shingo; Takami, Akihiro; Ohki, Yoshimichi; Ishii, Keisuke.

    IEEE International Conference on Conduction & Breakdown in Solid Dielectrics. Piscataway, NJ, United States : IEEE, 1998. p. 368-371.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Kato, H, Sakai, S, Takami, A, Ohki, Y & Ishii, K 1998, Dielectric breakdown in F-doped SiO2 films formed by plasma-enhanced chemical vapor deposition. in IEEE International Conference on Conduction & Breakdown in Solid Dielectrics. IEEE, Piscataway, NJ, United States, pp. 368-371, Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics, Vasteras, Sweden, 98/6/22.
    Kato H, Sakai S, Takami A, Ohki Y, Ishii K. Dielectric breakdown in F-doped SiO2 films formed by plasma-enhanced chemical vapor deposition. In IEEE International Conference on Conduction & Breakdown in Solid Dielectrics. Piscataway, NJ, United States: IEEE. 1998. p. 368-371
    Kato, Hiromitsu ; Sakai, Shingo ; Takami, Akihiro ; Ohki, Yoshimichi ; Ishii, Keisuke. / Dielectric breakdown in F-doped SiO2 films formed by plasma-enhanced chemical vapor deposition. IEEE International Conference on Conduction & Breakdown in Solid Dielectrics. Piscataway, NJ, United States : IEEE, 1998. pp. 368-371
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    abstract = "Fluorine-doped thin silicon dioxide films were synthesized by plasma-enhanced chemical vapor deposition of tetraethoxysilane and CF4, and the dielectric strength was measured with a serf-healing breakdown technique by applying short duration voltage pulses. As a result, the film containing a higher amount of fluorine has a higher dielectric strength. The reason for this increase is discussed from various aspects, and two persuasive mechanisms are presented.",
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    AU - Ishii, Keisuke

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