Dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane

Keisuke Ishii, Daisuke Isshiki, Toshifumi Karasawa, Yoshimichi Ohki

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    The intrinsic breakdown strength of tetraethoxysilane-SiO2 film is estimated via the self-healing technique with 1 us-width pulse voltages. The intrinsic breakdown strength is shown to decrease when the deposition temperature exceeds 400°C. The appearance of oxygen vacancies in the samples deposited at high temperatures is confirmed through the measurements of optical absorption at 7.6 eV and luminescence at 4.4 eV with synchroton radiation photons. The breakdown strength increases upon oxygen treatment which reduces the amount of oxygen vacancies. From these results, it is considered that the oxygen vacancies play an important role in lowering the breakdown strength. Three possible mechanisms are discussed.

    Original languageEnglish
    Title of host publicationIEEE International Conference on Conduction & Breakdown in Solid Dielectrics
    Place of PublicationPiscataway, NJ, United States
    PublisherIEEE
    Pages656-660
    Number of pages5
    Publication statusPublished - 1995
    EventProceedings of the 1995 IEEE 5th International Conference on Conduction and Breakdown in Solid Dielectrics - Leicester, Engl
    Duration: 1995 Jul 101995 Jul 13

    Other

    OtherProceedings of the 1995 IEEE 5th International Conference on Conduction and Breakdown in Solid Dielectrics
    CityLeicester, Engl
    Period95/7/1095/7/13

    Fingerprint

    Oxygen vacancies
    Plasma enhanced chemical vapor deposition
    Electric breakdown
    Polymers
    Light absorption
    Luminescence
    Photons
    Radiation
    Temperature
    Oxygen
    Electric potential

    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    Ishii, K., Isshiki, D., Karasawa, T., & Ohki, Y. (1995). Dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane. In IEEE International Conference on Conduction & Breakdown in Solid Dielectrics (pp. 656-660). Piscataway, NJ, United States: IEEE.

    Dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane. / Ishii, Keisuke; Isshiki, Daisuke; Karasawa, Toshifumi; Ohki, Yoshimichi.

    IEEE International Conference on Conduction & Breakdown in Solid Dielectrics. Piscataway, NJ, United States : IEEE, 1995. p. 656-660.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Ishii, K, Isshiki, D, Karasawa, T & Ohki, Y 1995, Dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane. in IEEE International Conference on Conduction & Breakdown in Solid Dielectrics. IEEE, Piscataway, NJ, United States, pp. 656-660, Proceedings of the 1995 IEEE 5th International Conference on Conduction and Breakdown in Solid Dielectrics, Leicester, Engl, 95/7/10.
    Ishii K, Isshiki D, Karasawa T, Ohki Y. Dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane. In IEEE International Conference on Conduction & Breakdown in Solid Dielectrics. Piscataway, NJ, United States: IEEE. 1995. p. 656-660
    Ishii, Keisuke ; Isshiki, Daisuke ; Karasawa, Toshifumi ; Ohki, Yoshimichi. / Dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane. IEEE International Conference on Conduction & Breakdown in Solid Dielectrics. Piscataway, NJ, United States : IEEE, 1995. pp. 656-660
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    AU - Ohki, Yoshimichi

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