Abstract
The intrinsic breakdown strength of tetraethoxysilane-SiO2 film is estimated via the self-healing technique with 1 us-width pulse voltages. The intrinsic breakdown strength is shown to decrease when the deposition temperature exceeds 400°C. The appearance of oxygen vacancies in the samples deposited at high temperatures is confirmed through the measurements of optical absorption at 7.6 eV and luminescence at 4.4 eV with synchroton radiation photons. The breakdown strength increases upon oxygen treatment which reduces the amount of oxygen vacancies. From these results, it is considered that the oxygen vacancies play an important role in lowering the breakdown strength. Three possible mechanisms are discussed.
| Original language | English |
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| Pages | 656-660 |
| Number of pages | 5 |
| Publication status | Published - 1995 Dec 1 |
| Event | Proceedings of the 1995 IEEE 5th International Conference on Conduction and Breakdown in Solid Dielectrics - Leicester, Engl Duration: 1995 Jul 10 → 1995 Jul 13 |
Other
| Other | Proceedings of the 1995 IEEE 5th International Conference on Conduction and Breakdown in Solid Dielectrics |
|---|---|
| City | Leicester, Engl |
| Period | 95/7/10 → 95/7/13 |
ASJC Scopus subject areas
- Engineering(all)
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Ishii, K., Isshiki, D., Karasawa, T., & Ohki, Y. (1995). Dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane. 656-660. Paper presented at Proceedings of the 1995 IEEE 5th International Conference on Conduction and Breakdown in Solid Dielectrics, Leicester, Engl, .