Dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane

Keisuke Ishii, Daisuke Isshiki, Toshifumi Karasawa, Yoshimichi Ohki

Research output: Contribution to conferencePaper

Abstract

The intrinsic breakdown strength of tetraethoxysilane-SiO2 film is estimated via the self-healing technique with 1 us-width pulse voltages. The intrinsic breakdown strength is shown to decrease when the deposition temperature exceeds 400°C. The appearance of oxygen vacancies in the samples deposited at high temperatures is confirmed through the measurements of optical absorption at 7.6 eV and luminescence at 4.4 eV with synchroton radiation photons. The breakdown strength increases upon oxygen treatment which reduces the amount of oxygen vacancies. From these results, it is considered that the oxygen vacancies play an important role in lowering the breakdown strength. Three possible mechanisms are discussed.

Original languageEnglish
Pages656-660
Number of pages5
Publication statusPublished - 1995 Dec 1
EventProceedings of the 1995 IEEE 5th International Conference on Conduction and Breakdown in Solid Dielectrics - Leicester, Engl
Duration: 1995 Jul 101995 Jul 13

Other

OtherProceedings of the 1995 IEEE 5th International Conference on Conduction and Breakdown in Solid Dielectrics
CityLeicester, Engl
Period95/7/1095/7/13

ASJC Scopus subject areas

  • Engineering(all)

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    Ishii, K., Isshiki, D., Karasawa, T., & Ohki, Y. (1995). Dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane. 656-660. Paper presented at Proceedings of the 1995 IEEE 5th International Conference on Conduction and Breakdown in Solid Dielectrics, Leicester, Engl, .