Dielectric properties of CaCu3Ti4O 12/CaTiO3 multilayer thin films synthesized by PLD method

Masakazu Mitsugi, Mamoru Fukunaga, Shutaro Asanuma, Yoshiaki Uesu, Wataru Kobayashi, Ichiro Terasaki

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    Abstract

    In order to elucidate the origin of the characteristic dielectric response of CaCu3Ti4O12 (CCTO), we synthesize c-axis oriented multilayer thin films composed of alternative layers of CCTO and an insulator CaTiO3 (CTO) using the Pulsed Laser Deposition (PLD) method and measure the capacitance of CTO/CCTO/CTO multilayer thin films with different thicknesses of CTO and CCTO layers. After removing the extrinsic electrode/CCTO boundary effect and the CCTO/CTO interface effect, the inherent dielectric constant of CCTO is determined.

    Original languageEnglish
    Pages (from-to)191-195
    Number of pages5
    JournalFerroelectrics
    Volume357
    Issue number1 PART 3
    DOIs
    Publication statusPublished - 2007

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    Keywords

    • CaCuTiO
    • Dielectric constant
    • Pulsed laser deposition
    • Thin films

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    Cite this

    Mitsugi, M., Fukunaga, M., Asanuma, S., Uesu, Y., Kobayashi, W., & Terasaki, I. (2007). Dielectric properties of CaCu3Ti4O 12/CaTiO3 multilayer thin films synthesized by PLD method. Ferroelectrics, 357(1 PART 3), 191-195. https://doi.org/10.1080/00150190701544311