DIFFRACTION EFFECTS ON PATTERN REPLICATION WITH SYNCHROTRON RADIATION.

N. Atoda, H. Kawakatsu, H. Tanino, Shingo Ichimura, M. Hirata, K. Hoh

Research output: Contribution to journalConference article

16 Citations (Scopus)

Abstract

With synchrotron radiation from the storage ring ETL-TERAS, the influence of Fresnel diffraction on replicated patterns was investigated. Spatial intensity distributions due to the diffraction were calculated with Fresnel integrals and compared with replicated patterns. Pattern degradation due to the diffraction depends on a parameter U//0 equals W/(G//p lambda /2)** one-half , where W is the pattern width, G//p the mask-to-wafer distance, and lambda the wavelength. From the calculation and the experiments it is concluded that the value of U//0 is needed to be larger than about three for a satisfactory pattern replication. Work with an experimental stencil mask with patterns of submicron dimensions is also described briefly.

Original languageEnglish
Pages (from-to)1267-1270
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume1
Issue number4
DOIs
Publication statusPublished - 1983 Jan 1
Externally publishedYes
EventProc of the Int Symp on Electron, Ion, and Photon Beams - Los Angeles, CA, USA
Duration: 1983 May 311983 Jun 3

Fingerprint

Synchrotron radiation
synchrotron radiation
Diffraction
Masks
diffraction
Storage rings
masks
Fresnel integrals
Degradation
Wavelength
Fresnel diffraction
Experiments
wafers
degradation
wavelengths

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

DIFFRACTION EFFECTS ON PATTERN REPLICATION WITH SYNCHROTRON RADIATION. / Atoda, N.; Kawakatsu, H.; Tanino, H.; Ichimura, Shingo; Hirata, M.; Hoh, K.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 1, No. 4, 01.01.1983, p. 1267-1270.

Research output: Contribution to journalConference article

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