Diffusion of implanted beryllium in silicon carbide studied by secondary ion mass spectrometry

T. Henkel, Y. Tanaka, Naoto Kobayashi, H. Tanoue, S. Hishita

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The diffusion behavior of beryllium implanted in silicon carbide has been investigated by secondary ion mass spectrometry. The shape of the as implanted profile changed considerably after annealing at temperatures above 1300°C due to redistribution processes. In addition, strong out diffusion into the annealing ambient and in diffusion into the bulk material was observed. Moreover, beryllium diffuses faster in epitaxial layers than in bulk crystals grown by sublimation. Effective diffusion coefficients with an activation energy of 3.1 eV were determined in bulk crystals in the temperature range 1500-1700°C. Beryllium is suggested to diffuse via interstitial sites.

Original languageEnglish
Pages (from-to)231-233
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number2
DOIs
Publication statusPublished - 2001 Jan 8
Externally publishedYes

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beryllium
silicon carbides
secondary ion mass spectrometry
annealing
sublimation
crystals
interstitials
diffusion coefficient
activation energy
temperature
profiles

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Diffusion of implanted beryllium in silicon carbide studied by secondary ion mass spectrometry. / Henkel, T.; Tanaka, Y.; Kobayashi, Naoto; Tanoue, H.; Hishita, S.

In: Applied Physics Letters, Vol. 78, No. 2, 08.01.2001, p. 231-233.

Research output: Contribution to journalArticle

Henkel, T. ; Tanaka, Y. ; Kobayashi, Naoto ; Tanoue, H. ; Hishita, S. / Diffusion of implanted beryllium in silicon carbide studied by secondary ion mass spectrometry. In: Applied Physics Letters. 2001 ; Vol. 78, No. 2. pp. 231-233.
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