Diffusion of molecular and atomic oxygen in silicon oxide

Tadatsugu Hoshino, Masayuki Hata, Saburo Neya, Yasushiro Nishioka, Takanobu Watanabe, Kosuke Tatsumura, Iwao Ohdomari

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

Density functional calculations using model clusters were performed to clarify the atomic-scale diffusion mechanism of an O2 molecule or an O atom in SiO2. The activation energy required for the O diffusion was estimated to be 1.3 eV, whereas that for the molecular O2 diffusion was revealed to be fairly low, 0.3 eV. This strongly suggests that the diffusing oxygen in SiO2 is primarily in a molecular form. The computational results were confirmed to be consistent between two SiO2 configurations of the cristobalit and quartz structures. Diffusion pathways and the related activation energies are shown to be well compatible with many recent works.

Original languageEnglish
Pages (from-to)3560-3565
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number6 A
DOIs
Publication statusPublished - 2003 Jun

Keywords

  • Activation energy
  • Diffusion mechanism
  • Molecular oxygen
  • Silicon oxidation
  • Theoretical calculation

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Diffusion of molecular and atomic oxygen in silicon oxide'. Together they form a unique fingerprint.

  • Cite this