Diffusion of zinc in InP, InAsP and InGaAs by the metal-organic vapor-phase diffusion technique

M. Wada, K. Sakakibara, T. Umezawa, S. Nakajima, S. Araki, T. Kudou, T. Ueda

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Abstract

A new technique of zinc diffusion into InP, InAsP and InGaAs by metal-organic vapor-phase diffusion, whereby a low-pressure metal-organic vapor-phase epitaxy with dimethylzinc and phosphine is utilized as an open tube diffusion system, is described. This technique allows the diffusion depth to be precisely controlled in the submicrometer range, is easy to scale up, and gives highly reproducible results. Results on the concentration dependence of the zinc diffusion coefficient, the activation of zinc acceptors by annealing obtained from the diffusion profiles as well as the change of zinc incorporation near the surface under various diffusion conditions are presented.

Original languageEnglish
Pages (from-to)153-162
Number of pages10
JournalDiffusion and Defect Data. Pt A Defect and Diffusion Forum
Volume183
Publication statusPublished - 2000
Externally publishedYes

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ASJC Scopus subject areas

  • Metals and Alloys

Cite this

Wada, M., Sakakibara, K., Umezawa, T., Nakajima, S., Araki, S., Kudou, T., & Ueda, T. (2000). Diffusion of zinc in InP, InAsP and InGaAs by the metal-organic vapor-phase diffusion technique. Diffusion and Defect Data. Pt A Defect and Diffusion Forum, 183, 153-162.