Diffusion profiles of Se in bulk ZnTe

Masakazu Kobayashi, H. Terakado, R. Sawada, A. Arakawa, K. Sato

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    Thermal diffusion of Se was performed in ZnTe substrates and the resulting material was characterized by TEM-EDS and X-ray reciprocal space mapping methods. ZnSe layers were formed on the surface of ZnTe substrates, and ZnSeTe ternary alloy layers with a certain alloy fraction region as well as a graded alloy fraction region were formed. The crystal quality of ZnSe and ZnSeTe region were affected by the diffusion conditions. High temperature diffusion and the use of H2 carrier gas have resulted in the degradation of the bulk ZnTe region.

    Original languageEnglish
    Pages (from-to)265-268
    Number of pages4
    JournalPhysica Status Solidi (B) Basic Research
    Volume229
    Issue number1
    DOIs
    Publication statusPublished - 2002

    Fingerprint

    Thermal diffusion
    Ternary alloys
    ternary alloys
    thermal diffusion
    Substrates
    profiles
    Energy dispersive spectroscopy
    Gases
    degradation
    Transmission electron microscopy
    Degradation
    X rays
    transmission electron microscopy
    Crystals
    gases
    crystals
    x rays
    Temperature

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electronic, Optical and Magnetic Materials

    Cite this

    Diffusion profiles of Se in bulk ZnTe. / Kobayashi, Masakazu; Terakado, H.; Sawada, R.; Arakawa, A.; Sato, K.

    In: Physica Status Solidi (B) Basic Research, Vol. 229, No. 1, 2002, p. 265-268.

    Research output: Contribution to journalArticle

    Kobayashi, Masakazu ; Terakado, H. ; Sawada, R. ; Arakawa, A. ; Sato, K. / Diffusion profiles of Se in bulk ZnTe. In: Physica Status Solidi (B) Basic Research. 2002 ; Vol. 229, No. 1. pp. 265-268.
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