Diffusion profiles of Se in bulk ZnTe

M. Kobayashi, H. Terakado, R. Sawada, A. Arakawa, K. Sato

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Thermal diffusion of Se was performed in ZnTe substrates and the resulting material was characterized by TEM-EDS and X-ray reciprocal space mapping methods. ZnSe layers were formed on the surface of ZnTe substrates, and ZnSeTe ternary alloy layers with a certain alloy fraction region as well as a graded alloy fraction region were formed. The crystal quality of ZnSe and ZnSeTe region were affected by the diffusion conditions. High temperature diffusion and the use of H2 carrier gas have resulted in the degradation of the bulk ZnTe region.

Original languageEnglish
Pages (from-to)265-268
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume229
Issue number1
DOIs
Publication statusPublished - 2002 Aug 29

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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