Thermal diffusion of Se was performed in ZnTe substrates and the resulting material was characterized by TEM-EDS and X-ray reciprocal space mapping methods. ZnSe layers were formed on the surface of ZnTe substrates, and ZnSeTe ternary alloy layers with a certain alloy fraction region as well as a graded alloy fraction region were formed. The crystal quality of ZnSe and ZnSeTe region were affected by the diffusion conditions. High temperature diffusion and the use of H2 carrier gas have resulted in the degradation of the bulk ZnTe region.
|Number of pages||4|
|Journal||Physica Status Solidi (B) Basic Research|
|Publication status||Published - 2002 Aug 29|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics