Diffusion profiles of Se in bulk ZnTe

Masakazu Kobayashi, H. Terakado, R. Sawada, A. Arakawa, K. Sato

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    Abstract

    Thermal diffusion of Se was performed in ZnTe substrates and the resulting material was characterized by TEM-EDS and X-ray reciprocal space mapping methods. ZnSe layers were formed on the surface of ZnTe substrates, and ZnSeTe ternary alloy layers with a certain alloy fraction region as well as a graded alloy fraction region were formed. The crystal quality of ZnSe and ZnSeTe region were affected by the diffusion conditions. High temperature diffusion and the use of H2 carrier gas have resulted in the degradation of the bulk ZnTe region.

    Original languageEnglish
    Pages (from-to)265-268
    Number of pages4
    JournalPhysica Status Solidi (B) Basic Research
    Volume229
    Issue number1
    DOIs
    Publication statusPublished - 2002

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    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electronic, Optical and Magnetic Materials

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