Diffusivity of Cu ions in solid electrolyte and its effect on the performance of nanometer-scale switch

Naoki Banno, Toshitsugu Sakamoto, Noriyuki Iguchi, Hiroshi Sunamura, Kazuya Terabe, Tsuyoshi Hasegawa, Masakazu Aono

Research output: Contribution to journalArticle

105 Citations (Scopus)

Abstract

A novel solid-electrolyte nonvolatile switch that we previously developed for programmable large-scale-integration circuits turns on or off when a conducting Cu bridge is formed or dissolved in the solid electrolyte. Cu+ ion migration and an electrochemical reaction are involved in the switching process. For logic applications, we need to adjust its turn-on voltage (VON), which was too small to maintain the conductance state during logic operations. In this paper, we clarified that VON is mainly affected by the rate of Cu+ ion migration in the solid electrolyte. Considering the relationship between the migration rate and VON, we replaced the former electrolyte, Cu2-αS, with Ta2O5, which enabled us to appropriately adjust VON with a smaller Cu+ ion diffusion coefficient.

Original languageEnglish
Pages (from-to)3283-3287
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume55
Issue number11
DOIs
Publication statusPublished - 2008 Nov 27
Externally publishedYes

Keywords

  • Electrochemical devices
  • Ions
  • Programmable logic device
  • Switches

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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