TY - JOUR
T1 - Diffusivity of Cu ions in solid electrolyte and its effect on the performance of nanometer-scale switch
AU - Banno, Naoki
AU - Sakamoto, Toshitsugu
AU - Iguchi, Noriyuki
AU - Sunamura, Hiroshi
AU - Terabe, Kazuya
AU - Hasegawa, Tsuyoshi
AU - Aono, Masakazu
N1 - Funding Information:
Manuscript received March 13, 2008; revised July 22, 2008. Current version published October 30, 2008. This work was supported in part by ICORP, JST, as part of the Nanoscale Quantum Conductor Array Project. The review of this paper was arranged by Editor M. J. Deen.
PY - 2008
Y1 - 2008
N2 - A novel solid-electrolyte nonvolatile switch that we previously developed for programmable large-scale-integration circuits turns on or off when a conducting Cu bridge is formed or dissolved in the solid electrolyte. Cu+ ion migration and an electrochemical reaction are involved in the switching process. For logic applications, we need to adjust its turn-on voltage (VON), which was too small to maintain the conductance state during logic operations. In this paper, we clarified that VON is mainly affected by the rate of Cu+ ion migration in the solid electrolyte. Considering the relationship between the migration rate and VON, we replaced the former electrolyte, Cu2-αS, with Ta2O5, which enabled us to appropriately adjust VON with a smaller Cu+ ion diffusion coefficient.
AB - A novel solid-electrolyte nonvolatile switch that we previously developed for programmable large-scale-integration circuits turns on or off when a conducting Cu bridge is formed or dissolved in the solid electrolyte. Cu+ ion migration and an electrochemical reaction are involved in the switching process. For logic applications, we need to adjust its turn-on voltage (VON), which was too small to maintain the conductance state during logic operations. In this paper, we clarified that VON is mainly affected by the rate of Cu+ ion migration in the solid electrolyte. Considering the relationship between the migration rate and VON, we replaced the former electrolyte, Cu2-αS, with Ta2O5, which enabled us to appropriately adjust VON with a smaller Cu+ ion diffusion coefficient.
KW - Electrochemical devices
KW - Ions
KW - Programmable logic device
KW - Switches
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U2 - 10.1109/TED.2008.2004246
DO - 10.1109/TED.2008.2004246
M3 - Article
AN - SCOPUS:56549119052
SN - 0018-9383
VL - 55
SP - 3283
EP - 3287
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 11
ER -