Direct bonding of SiC by the suface activated bonding method

Tadatomo Suga, Fengwen Mu, Masahisa Fujino, Yoshikazu Takahashi, Haruo Nakazawa, Kenichi Iguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

3-inch 4H-SiC wafer direct bonding has been achieved by the modified surface activated bonding (SAB) method without any chemical-clean treatment and high temperature annealing. Strong bonding of the SiC wafers, greater than 32MPa (tensile strength), was demonstrated at room temperature under 5kN force for 300 seconds. Almost the entire wafer has been bonded very well except the small outermost region and few voids. Moreover, the interface structure was analyzed to explore the bonding mechanism. An amorphous layer was found to be as the intermediate layer at the interface.

Original languageEnglish
Title of host publication2014 International Conference on Electronics Packaging, ICEP 2014
PublisherIEEE Computer Society
Pages341-344
Number of pages4
ISBN (Print)9784904090107
DOIs
Publication statusPublished - 2014 Jan 1
Externally publishedYes
Event2014 International Conference on Electronics Packaging, ICEP 2014 - Toyama, Japan
Duration: 2014 Apr 232014 Apr 25

Publication series

Name2014 International Conference on Electronics Packaging, ICEP 2014

Conference

Conference2014 International Conference on Electronics Packaging, ICEP 2014
CountryJapan
CityToyama
Period14/4/2314/4/25

Fingerprint

Tensile strength
Annealing
Temperature

Keywords

  • 4H-sic
  • Bonding strength
  • Interface
  • Modified sab method
  • Room temperature bonding

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Suga, T., Mu, F., Fujino, M., Takahashi, Y., Nakazawa, H., & Iguchi, K. (2014). Direct bonding of SiC by the suface activated bonding method. In 2014 International Conference on Electronics Packaging, ICEP 2014 (pp. 341-344). [6826707] (2014 International Conference on Electronics Packaging, ICEP 2014). IEEE Computer Society. https://doi.org/10.1109/ICEP.2014.6826707

Direct bonding of SiC by the suface activated bonding method. / Suga, Tadatomo; Mu, Fengwen; Fujino, Masahisa; Takahashi, Yoshikazu; Nakazawa, Haruo; Iguchi, Kenichi.

2014 International Conference on Electronics Packaging, ICEP 2014. IEEE Computer Society, 2014. p. 341-344 6826707 (2014 International Conference on Electronics Packaging, ICEP 2014).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Suga, T, Mu, F, Fujino, M, Takahashi, Y, Nakazawa, H & Iguchi, K 2014, Direct bonding of SiC by the suface activated bonding method. in 2014 International Conference on Electronics Packaging, ICEP 2014., 6826707, 2014 International Conference on Electronics Packaging, ICEP 2014, IEEE Computer Society, pp. 341-344, 2014 International Conference on Electronics Packaging, ICEP 2014, Toyama, Japan, 14/4/23. https://doi.org/10.1109/ICEP.2014.6826707
Suga T, Mu F, Fujino M, Takahashi Y, Nakazawa H, Iguchi K. Direct bonding of SiC by the suface activated bonding method. In 2014 International Conference on Electronics Packaging, ICEP 2014. IEEE Computer Society. 2014. p. 341-344. 6826707. (2014 International Conference on Electronics Packaging, ICEP 2014). https://doi.org/10.1109/ICEP.2014.6826707
Suga, Tadatomo ; Mu, Fengwen ; Fujino, Masahisa ; Takahashi, Yoshikazu ; Nakazawa, Haruo ; Iguchi, Kenichi. / Direct bonding of SiC by the suface activated bonding method. 2014 International Conference on Electronics Packaging, ICEP 2014. IEEE Computer Society, 2014. pp. 341-344 (2014 International Conference on Electronics Packaging, ICEP 2014).
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