Direct deposition of a blanket tungsten layer on SiO2 by preexposure of helium plasma

Takashi Noma, Kwang Soo Seol, Makoto Fujimaki, Yoshimichi Ohki

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    By utilizing preexposure of helium plasma, a method of depositing a blanket tungsten layer directly on SiO2 has been developed. When SiO2 films are exposed to a helium plasma, oxygen atoms are knocked on by active species in the plasma and the surface becomes covered with reduced silicon. It is assumed that this silicon reacts with WF6 to form tungsten nuclei, and that tungsten layers grow through the reaction of H2 and WF6 at these nuclei. The deposited tungsten layer is stable with a low resistivity in the form of the α-W crystal and shows strong adhesion to the SiO2 film due to the anchoring effect of tungsten.

    Original languageEnglish
    Pages (from-to)8423-8426
    Number of pages4
    JournalJournal of Applied Physics
    Volume85
    Issue number12
    Publication statusPublished - 1999 Jun 15

    Fingerprint

    helium plasma
    blankets
    tungsten
    nuclei
    silicon
    oxygen atoms
    adhesion
    electrical resistivity
    crystals

    ASJC Scopus subject areas

    • Physics and Astronomy(all)
    • Physics and Astronomy (miscellaneous)

    Cite this

    Direct deposition of a blanket tungsten layer on SiO2 by preexposure of helium plasma. / Noma, Takashi; Seol, Kwang Soo; Fujimaki, Makoto; Ohki, Yoshimichi.

    In: Journal of Applied Physics, Vol. 85, No. 12, 15.06.1999, p. 8423-8426.

    Research output: Contribution to journalArticle

    Noma, Takashi ; Seol, Kwang Soo ; Fujimaki, Makoto ; Ohki, Yoshimichi. / Direct deposition of a blanket tungsten layer on SiO2 by preexposure of helium plasma. In: Journal of Applied Physics. 1999 ; Vol. 85, No. 12. pp. 8423-8426.
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