Direct diagnostic technique of high-intensity laser profile based on laser-compton scattering

Y. Yoshida*, R. Sato, K. Sakaue, A. Endo, M. Washio

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A high-intensity laser is essential for plasma generation for EUV (Extreme Ultraviolet) lithography, which is studied as the next generation of ultra-fine semiconductor lithography. Nevertheless, there is no way to directly measure profile of high-intensity laser at the present day. Therefore, we have been developing a method for measuring high-intensity laser profile based on the laser- Compton scattering using Cs-Te photo cathode RF-Gun at Waseda University. Specifically, laser profile is obtained by scanning the electron beam which is focused to about 10 μm by solenoid lens. We have simulated beam size focused by solenoid lens using tracking code GPT (General Particle Tracer) and optimized the beam parameter to obtain beam size of 10 μm. Then, we have installed solenoid lens and generated focused beam. We measured beam size using radiochromic film called GAFCHROMIC dosimetry film type HD-810. In this conference, we will report the result of GPT simulations, beam size measurements, the present progress and future prospects.

Original languageEnglish
Title of host publicationIPAC 2013
Subtitle of host publicationProceedings of the 4th International Particle Accelerator Conference
Pages3657-3659
Number of pages3
Publication statusPublished - 2013
Event4th International Particle Accelerator Conference, IPAC 2013 - Shanghai, China
Duration: 2013 May 122013 May 17

Publication series

NameIPAC 2013: Proceedings of the 4th International Particle Accelerator Conference

Conference

Conference4th International Particle Accelerator Conference, IPAC 2013
Country/TerritoryChina
CityShanghai
Period13/5/1213/5/17

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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